Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

“…The observed level of 0.66 eV is near Ec 0.65 eV and was identified after electron irradiation of Si by electrons with energy 10 MeV [15]. Apart from known A-centres, (interstitial oxygen atom + Si-vacancy) and E-centres (donor atom + Si-vacancy), new centres with Ес 0.33 eV; Ес 0.40 eV and Ес 0.22 eV have been found and studied in literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The first one is connected with interstitial Si atom, the second one corresponds to bi-vacancy and the third one is identified as bi-vacancy + oxygen (C-centre) [1,3,7,8].…”

“…It is known, that the irradiation by electron with energy 8 MeV forms in Si crystals structural point and complex defects (in particular, with impurity), so called "secondary radiation defects" (SRD) [1][2][3][4][5][6]. At low irradiation doses mainly point defect production may occur, while at high doses SRD formation becomes preferable, and moreover, clusters are formed too [5].…”

“…After irradiation by dose of 4 × 10 15 el/cm 2 the following activation energies of RD are calculated 0.395 eV; 0.53 eV in n-Si and 0.56 eV; 0.66 eV in p-Si which stimulate conductivity because the carriers' mobility has a weak dose dependence. Among many known energetic levels in Si [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] corresponding to different RD, Figures 2-4 present energetic levels, which are identified to defined levels in literature. For example, the observed level of 0.395 eV can be classified as E-center with location on Ec 0.4 eV in the forbidden gap of Si [7][8][9]12,13], i.e.…”

“…There are numerous investigations concerning the influence of irradiations on the properties of solid states (including silicon) which are carried out before and after irradiation [for example [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The works on studying the properties of solid states directly under the irradiation process are very scarce [15][16][17][18][19][20].…”

Ultrasonic Defect Manipulation in Irradiated Silicon

“…In case of dislocation free silicon, this results in an alteration of semiconductor photoelectric properties [20]. It also has been shown [21], that electronic excitation can in turn stimulate an atomic migration in a semiconductor. So we cannot exclude processes of this type in our experiments.…”