Fundamental processes of radiation energy storage in KDP (KH2PO4) and ADP (NH4H2PO4) crystals

Kuanyshev, V. T.; Belykh, T. A.; Огородников, И. Н.; Шульгин, Б. В.; Satybaldieva, M. K.; Кидибаев, М. М.

doi:10.1016/s1350-4487(01)00042-7

Cited by 19 publications

(5 citation statements)

References 7 publications

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“…Experiments per formed on LGBO crystals established efficient forma tion of lithium cation vacancies under quite moderate irradiation [28,29]. It is known [30] that cation vacan cies can form also to compensate for excess charge or lattice deformation induced by incorporation of a sub stitution impurity. To learn the true nature of the Ce1 center, additional studies are needed.…”

Section: Luminescence Spectra Of Ce 3+mentioning

confidence: 99%

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

et al. 2012

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This paper reports on a study of the luminescence emitted by Li 6 Gd(BO 3 ) 3 : Ce 3+ crystals under selective photoexcitation to lower excited states of the host ion Gd 3+ and impurity ion Ce 3+ within the 100-500 K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10-15 fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd 3+ ions and vibrational energy relaxation between the 6 I j and 6 P j levels. It has been shown that radiative transitions in Ce 3+ ions from the lower excited state 5d 1 to 2 F 5/2 and 2 F 7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.

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Section: Luminescence Spectra Of Ce 3+mentioning

confidence: 99%

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

et al. 2012

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“…The monotonic increase in the excitation effi ciency of low temperature luminescence at energies above 18 eV (Figs. 5 and 6) can be compared to the photon multiplication process, as was detected previ ously for some other wide band gap oxides, e.g., for BBO [21], Al 2 O 3 [22], or LBO [18,20,23], KDP [24]. However, this aspect requires detailed consideration.…”

Section: Discussionmentioning

confidence: 94%

Luminescence and electronic excitations in crystals K2Al2B2O7 with defects

et al. 2012

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This paper reports on the results of the comprehensive study of the dynamics of electronic excita tions in K 2 Al 2 B 2 O 7 (KABO) crystals, obtained by low temperature luminescence vacuum ultraviolet spec troscopy with nanosecond time resolution upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL) decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K; the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible and ultraviolet spectral regions; an intense long wavelength PL band has been detected at 1.72 eV; channels of the formation and decay of electronic excitations in K 2 Al 2 B 2 O 7 crystals have been discussed.

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“…Previous studies have been limited to (i) observations of sample color changes produced by irradiation with several MeV light ion species, 8,9 (ii) optical absorption measurements after room-temperature 0.71 MeV 1 H ion irradiation, 9 and (iii) the observation of radiation-induced "spontaneous cleavage" after bombardment with 88 MeV 16 O ions. 8 In addition, Som et al 10 have recently reported a Raman study of KDP irradiated with 1.5 MeV 4 He ions to fluences of 8.9 × 10 14 , 1.7 × 10 15 , and 3.5 × 10 15 cm −2 , revealing evidence of some ion-beam-induced disordering as well as apparent loss of H. We are not aware of any previous reports on the effect of ion irradiation conditions on the formation of structural defects in KDP.…”

Section: S O Kucheyev and T E Feltermentioning

confidence: 99%

“…Such cracking and blistering, attributed to irradiation-induced stress, is consistent with previous observations of surface color changes and "spontaneous cleavage" in ion-irradiated KDP. 8,9 However, we have found that the formation of cracks and blisters typically proceeds over extended periods of time (such as days) after ion irradiation and strongly depends on irradiation parameters as well as the ambient conditions (such as temperature and humidity) during sample storage. These interesting effects currently require additional systematic studies.…”

Section: S O Kucheyev and T E Feltermentioning

confidence: 99%

Structural disorder produced in KH2PO4 by light-ion bombardment

Kucheyev

Felter

2004

Journal of Applied Physics

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We study structural disorder produced in tetragonal KH2PO4 (KDP) single crystals at room temperature by irradiation with MeV light ions. Results show that electronic energy loss plays a major role in the production of lattice defects in KDP. The effective diameters of ion tracks depend superlinearly on the electronic stopping power of energetic light ions. Structural lattice disorder is also accompanied by the formation of a network of cracks and blisters on the sample surface. Such irradiation-induced cracking and blistering typically evolve over extended periods of time (e.g., days) after bombardment and are strongly affected by ion irradiation and sample storage conditions.

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Fundamental processes of radiation energy storage in KDP (KH2PO4) and ADP (NH4H2PO4) crystals

Cited by 19 publications

References 7 publications

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

Luminescence and electronic excitations in crystals K2Al2B2O7 with defects

Structural disorder produced in KH2PO4 by light-ion bombardment

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