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Positron trapping in silicon deformed under high‐stress conditions at room temperature is compared to that in Si plastically deformed at higher temperatures. After room temperature deformation, thermally rather stable vacancy clusters appear. No evidence for positron capture in dislocations is found. In contrast, after high‐temperature deformation, positrons are trapped in rather large vacancy clusters and in dislocations acting as combined positron traps. The specific features of positron trapping in silicon plastically deformed at room temperature are related to the dislocation core structure and to the inhomogeneous distribution of defects. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The article [1] describes specific features of positron trapping in silicon plastically deformed at room temperature. The results are related to the dislocation core structure and the inhomogeneous deformation. The picture shows the probability density function of a positron localized in a vacancy in silicon. The calculation was performed with the superimposed‐atom model. The degree of localization and consequently the defect‐related positron lifetime vary for different open‐volume defects, such as vacancies, voids, and dislocations. The first author, Hartmut S. Leipner, is CEO of the Center of Materials Science of the University Halle–Wittenberg. His research activities are focused on the characterization of extended defects in semiconductors.