The spatial distribution of frenkel pair components created in germanium and silicon under irradiation

Abstract

The kinetics of the Frenkel pair accumulation in Ge and Si under low‐temperature γ‐ or electron‐irradiation is investigated. The essential role of ionization‐enhanced annihilation of interstitials and vacancies during irradiation is found. A drift‐diffusion mechanism of the annihilation is proposed. Under suitable conditions this process can provide nearly complete annihilation of the generated pairs. The distribution of the Frenkel pairs over the distances between their components is derived from a comparison of the calculated and experimental results.

Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge

“…dumbbell configuration to a tetrahedral position as a result of successive charge transfer processes. The same assumption has been made to account for the nonlinear dose dependence of the concentration of Frenkel pairs, which is observed after irradiation with gamma rays at 6.5 K (34,35). From the present calculations, activation-free migration of self-interstitials at low temperature can be explained by a SI-T 2+ ↔ SI-D 0 charge transfer process as illustrated in figure 3.…”

Review—Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory

“…11 sive charge transfer processes. The same assumption has been made to account for the nonlinear dose dependence of the concentration of Frenkel pairs, which is observed after irradiation with gamma rays at 6.5 K. 63,64 From the present calculations, activation-free migration of self-interstitials at low temperature can be explained by a SI-T 2+ ↔ SI-D 0 charge transfer process as illustrated in Fig. 10.…”

In-situ HVEM study of the influence of localised strain, interfaces, and extrinsic point defects on {113}-defect generation in silicon

“…During irradiation with high energy electrons, silicon lattice atoms are displaced, resulting in the formation of Frenkel pairs. In a small fraction of these Frenkel pairs the self-interstitial and vacancy are separated far enough to become independent of each other [15]. The majority of the Frenkel pairs will however disappear in a very short time by recombination of the self-interstitial with the associated vacancy.…”