2021
DOI: 10.33774/chemrxiv-2021-zkmmk
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On the dynamics in chemical vapor deposition of InN

Abstract: Epitaxial, nanometer-thin indium nitride (InN) films are considered as promising active layers in various device applications but remains challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD), by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results, and previous literature, show that a time-resolved precursor supply is highly beneficial for depo… Show more

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