2017
DOI: 10.1016/j.surfcoat.2017.06.076
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On the effect of the substrate to target position on the properties of titanium carbide/carbon coatings

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Cited by 9 publications
(6 citation statements)
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“…7 Leadin et al studied the development of TiC from pyrocarbon and H 2 -TiCl 4 mixture at 1000 • C. 7 In this case, precursors in the gaseous phase reacted on the heated carbide substrate at about 1000 • C, which presumed that the temperature-sensitive substrate cannot be used. 8 On the other hand, physical vapor deposition has been developed for lower deposition temperatures and showed greater freedom to control the composition of thin films. 9 Sedlackova et al used the DC magnetron sputtering between 25 and 800 • C deposition temperature, argon atmosphere, and two separate sources, Ti and C. 10 Similar method is the pulsed closed-field unbalanced magnetron cosputtering (PCFUMS) which was originally developed for reactive deposition of insulating films.…”
Section: Introductionmentioning
confidence: 99%
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“…7 Leadin et al studied the development of TiC from pyrocarbon and H 2 -TiCl 4 mixture at 1000 • C. 7 In this case, precursors in the gaseous phase reacted on the heated carbide substrate at about 1000 • C, which presumed that the temperature-sensitive substrate cannot be used. 8 On the other hand, physical vapor deposition has been developed for lower deposition temperatures and showed greater freedom to control the composition of thin films. 9 Sedlackova et al used the DC magnetron sputtering between 25 and 800 • C deposition temperature, argon atmosphere, and two separate sources, Ti and C. 10 Similar method is the pulsed closed-field unbalanced magnetron cosputtering (PCFUMS) which was originally developed for reactive deposition of insulating films.…”
Section: Introductionmentioning
confidence: 99%
“…studied the development of TiC from pyrocarbon and H 2 ‐TiCl 4 mixture at 1000°C 7 . In this case, precursors in the gaseous phase reacted on the heated carbide substrate at about 1000°C, which presumed that the temperature‐sensitive substrate cannot be used 8 …”
Section: Introductionmentioning
confidence: 99%
“…Magnetron sputtering is a standard method for industrial TiC coating deposition. For preparing TiC coatings with magnetron sputtering two main ways are followed in the literature: 1) Ti target is used in reactive acetylene [1] [2] [3] [4] [5] [6] [7] [8] [9], 2) titanium and carbon targets were sputtered at the same time [10] [11] [12] [13] [14]. The room temperature is the most used temperature for sputtering of TiC coatings, because it is commonly useable for industry [1] [2] [4] [10] [11] [15].…”
Section: Introductionmentioning
confidence: 99%
“…Как правило, износостойкие покрытия формируются на базе карбидов, нитридов и оксидов таких элементов, как титан, бор, кремний, алюминий и т. д. Соединения данных элементов обладают высокой микротвердостью, термической стабильностью, износостойкостью. Наибольший интерес представляют карбиды титана, позволяющие увеличить микротвердость поверхностных слоев инструментального материала до 30 000 МПа [1][2][3][4][5][6].…”
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“…Одним из перспективных направлений при нанесении покрытий является химико-термическая обработка (ХТО). Сущность ХТО заключается в нагреве и выдержке при заданной температуре изделий в активных твердых, жидких или газовых средах, в результате чего вследствие диффузионных процессов, в поверхностных слоях изделий изменяется элементный и структурно-фазовый состав, а следовательно, и свойства этих поверхностных слоев [1][2][3][4][5][6][7][8][9][10][11][12][13][14].…”
unclassified