On the effect of water and oxygen in chemical vapor deposition of boron nitride

Pedersen, Henrik; Chubarov, Mikhail; Högberg, Hans; Jensen, Jens; Henry, Anne

doi:10.1016/j.tsf.2012.05.004

Cited by 15 publications

(11 citation statements)

References 21 publications

(27 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The determined distance d000ℓ = 3.37 Å is larger than the value reported for films deposited from B2H6 19 and BCl3 29 at 1200 °C (d000ℓ = 3.34 Å). It is, however, closer to that of h-and r-BN than the value d000ℓ = 3.5 Å previously determined for as-deposited t-BN films grown from borazine at 900 °C 27 and from TEB and NH3 at 1200 °C 25 . In addition, XRD shows that our t from borazine and BCl3.…”

Section: Resultssupporting

confidence: 58%

“…Depositions performed below 1000 °C on Si, with several boron precursors such as diborane (B2H6) [18][19][20][21][22][23] , decaborane (14) (B10H14) 24 , triethylboron (TEB, B(C2H5)3) 25 and ammonia (NH3) or with single-source precursors such as ammonia-borane (H3NBH3) 10 and B-trichloroborazine (B3Cl3N3H3) 26 resulted in growth of amorphous BN. Turbostratic BN (t-BN) films was reported at 800 °C from borazine (B3N3H6) 27 , at 980 °C from N-trimethyl borazine (B3H3N3(CH3)3) 28 and at 1200 °C using TEB 25 or BCl3 29 . Polycrystalline films were deposited from B2H6 and NH3 at 1200 °C on Si(100) 19 and nanocrystalline films from TEB and NH3 on Si(111) at 1350 °C 5 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Souqui

Pedersen

Högberg

2020

Preprint

Self Cite

View full text Add to dashboard Cite

Thin films of the sp2-hybridized polytypes of boron nitride are interesting materials for several electronic applications such as UV-devices. Deposition of epitaxial sp2-BN films has been demonstrated on several technologically important semiconductor substrates such as SiC and Al2O3 and where controlled thin film growth on Si would be beneficial for integration of sp2-BN in many electronic device systems. We investigate growth of BN films on Si(111) by chemical vapor deposition from triethylboron B(C2H5)3 and ammonia NH3 at 1300 °C with focus on treatments of the Si(111) surface by nitridation, carbidization and nitridation followed by carbidization prior to BN growth. Fourier transform infrared spectroscopy shows that the BN films deposited exhibit sp2 bonding. X-ray diffraction reveals that the sp2-BN films predominantly grow amorphous on untreated and pre-treated Si(111), but with diffraction data showing that turbostratic BN can be deposited on Si(111) when the formation of Si3N4 is avoided. We accomplish this condition by a nitridation procedure in a deposition chamber where BxC had previously been deposited at high temperature, but where the synthesis route needs to be further developed for a better process control.

show abstract

Section: Resultssupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Souqui

Pedersen

Högberg

2020

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…We showed by thermodynamic calculations that these B-O bonds are formed already in the gas phase. Any oxygen contamination of the growth chamber thus prohibits the growth of high quality BN [12].…”

Section: Growth Results and Xrdmentioning

confidence: 99%

Boron nitride: A new photonic material

Chubarov

Pedersen

Högberg

et al. 2014

Physica B: Condensed Matter

View full text Add to dashboard Cite

Rhombohedral Boron Nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. Xray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

show abstract

“…But in addition to these two crystals there are also less 8 7 , 3 2 , 3 1 ; 8 3 0, 0, : N 2 1 , 3 2 , 3 1 0; 0, 0, : B c-BN 216 a=3.615Å 4 3 , 4 1 , 4 3 ; 4 1 , 4 3 , 4 3 ; 4 3 , 4 3 , 4 1 ; 4 1 , 4 1 , 4 1 : N 0 , 2 1 , 2 1 ; 2 1 , 0 , 2 1 ; 2 1 , 2 1 , 0 0; 0, 0, : B oxides and hydroxides [11]. t-BN on the other side has some degree of order -basal planes are parallel to each other, but there is no ordering between the basal planes (rotational disorder) and spacing between them is larger than for h-or r-BN and is not well defined [12].…”

Section: Boron Nitridementioning

confidence: 99%

“…To remove water adsorption in the reactor, which is the main source of oxygen that is not desirable to be present in the reactor during growth, the system was evacuated to a vacuum of about 10 -7 mbar prior the growth and during stand-by of the system [11].…”

Section: Reactormentioning

confidence: 99%

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

Self Cite

View full text Add to dashboard Cite

The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp 2 hybridised Boron Nitride (sp 2 -BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp 2 -BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures.For the growth of sp 2 -BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H 2 as carrier gas is found to be necessary for the growth of crystalline sp 2 -BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp 2 -BN film.It was observed that for the growth of crystalline sp 2 -BN on c-axis oriented -Al 2 O 3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp 2 -BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp 2 -BN is 1500 °C. Nevertheless, the growth of crystalline sp 2 -BN was also observed on -Al 2 O 3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp 2 -BN was formed, according to X-ray diffraction.Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on Om man skulle kunna göra ljusdioder av BN skulle dessa sända ut ljus med en våglängd på cirka 220 nm alltså den typen av ultraviolettljus (UV) som ozonlagret filtrerar bort från solen. Av sådana ljusdioder skulle man sedan kunna göra vita ljusdioder genom att använda en luminofor, vilket är ett material som absorberar UV-ljus och sedan sänder ut vitt ljus, men ännu mera spännande skulle det vara att använda ljusdioderna för vattenrening då denna typ av UV-ljus dödar bakterier.Eftersom BN bildar samma kristallstrukturer som kol, så är den grafitlika, sp 2 -hybridiserade formen av BN mycket intressant att använda tillsammans med grafen.Beräkningar har visat att om man använder sp 2 -BN som substrat till grafen så kommer man åt större del av de förutspådda materialegenskaperna för grafen än om man använder andra substrat.Syftet med detta arbete har varit att utveckla en syntesprocess för tunna filmer av sp 2 -BN med tillräckligt hög kvalité för att kunna börja utforska alla möjligheter med BN, för detta har en teknik som kal...

show abstract

On the effect of water and oxygen in chemical vapor deposition of boron nitride

Cited by 15 publications

References 21 publications

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Boron nitride: A new photonic material

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Contact Info

Product

Resources

About