On the ferroelectric nature of the cubic-rhombohedral phase transition in Pb1−xGexTe

Structural Phase Transition and Carrier Density Tuning in SnSexTe1‐x Nanoplates

“…We plotted T up and Δ T as a function of x nominal and carrier density n in Figure c,d, respectively, and found that both T up and Δ T have a linear relation with x nominal rather than n . This results show that the compositional change is the dominant effect, similar to phase transition temperatures in Pb 1‐ x Ge x Te, Ge 1‐ x Sn x Te, and Pb 1‐ x Sn x Te ternary compounds. Because the cubic SnSe has a higher phase transition temperature than the cubic SnTe, the transition temperature of SnSe x Te 1‐ x is between that of SnSe and SnTe, and increases with the increasing Se content.…”

“…We systematically map out the crystal structure evolution from the desired cubic structure to the unwanted orthorhombic structure as a function of the Se/Te ratio. In addition, we show how the temperature‐dependent phase transition, accompanied with the structural change from the high‐temperature cubic to the low‐temperature rhombohedral structure, evolves in cubic SnSe x Te 1‐ x nanoplates as a function of the Se/Te ratio. Our work represents a materials solution to solving the high bulk carrier density in TCIs and provides a pathway for exploring the surface states more effectively.…”

A Novel Ferroelectric Rashba Semiconductor

“…From the onset of this slope change, the critical temperatures T c were derived, increasing from 100 to 160 and 260 K for x Ge = 0.03, 0.06, and 0.1, respectively. As shown by Figure 1c this dependence can be described by the relation T c (x Ge ) = 1000 √ x Ge − 70 [K], which is in good agreement with the literature (see Figure 1c) where the T c has been obtained by a large variety of experimental techniques such as EXAFS, [55] capacitance, [47,52,50,58] transport [51,53] and specific heat [68] measurements, Raman [45,46,61] and optical [48,53,54,56] spectroscopies.…”

Dielectric properties of c-axis oriented Zn1−xMgxO thin films grown by multimagnetron sputtering

“…The structural phase transition in IV-VI compound semiconductors such as PbTe, SbTe, GeTe, and their ternary alloys has been studied using the method of electrical transport, 9 capacitance measurement, 10 Raman scattering. 11 The ferroelectric nature in these systems was reported by the earlier researchers.…”