Dielectric properties of c-axis oriented Zn1−xMgxO thin films grown by multimagnetron sputtering

Abstract

Investigations on multimagnetron sputtered Zn 1 − x Mg x O thin films through metal-ferroelectric-semiconductor configuration J. Appl. Phys. 104, 043510 (2008); 10.1063/1.2969718Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation

Filtering performance improvement in V-doped ZnO/diamond surface acoustic wave filters

“…This giant piezoresponse implies that V-doping significantly changes the electromechanical response of Zn 0.979 V 0.021 O films, which we suggest is due to the ferroelectricity in Zn 0.979 V 0.021 O films as we have obtained in our previous work [15,16]. Similar ferroelectricity has also been observed in Li-and Mg-doped ZnO systems [24,25]. The giant piezoresponse of Zn 0.979 V 0.021 O films may improve the K 2 of SAW devices.…”

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

“…Polarization versus voltage plot depicts a hysteric loop without any double loops or kinky loop which suggests that the samples are ferroelectric. The remnant polarization was calculated to be 0.2 mC/cm2 which is in good agreement with those observed for some ZnO layers and other semiconductor ferroelectrics [8,9]. Fig.…”

“…But the application of ZnO materials in memories has not been fully explored till date and still research is at its infancy. Few research groups have reported the ferroelectric properties in lithium-doped ZnO thin films [8] and magnesiumdoped ZnO thin films [9]. One of the studies on dielectric and ferroelectric properties of K-doped ZnO free standing nanorods in (1 0 0) direction display lossy P-E curve without clear results of ferroelectric property [10].…”

Structural, optical and ferroelectric properties of V doped ZnO

“…Furthermore, some ZnO-based ferroelectric materials have also been reported. However, the problem in ZnO-based ferroelectrics (Li, Mg and Cr-doped ZnO) is their low remnant polarization and high coercive field (Onodera et al 1996;Kumar et al 2013;Dhananjay et al 2006;Yang et al 2008). The persistence of ferroelectric behaviour, at and above room temperature in V doped ZnO opens up new possibilities for high temperature nanopiezotronics applications and ferroelectric memory devices.…”