On the formation of molybdenum silicides in MoSi multilayers: the effect of Mo thickness and annealing temperature

Temperature induced diffusion in Mo/Si multilayer mirrors

“…[10][11][12][13] During heating of a multilayer, diffusion between the layers ͑intermixing͒ and diffusion in the layers occur simultaneously, which in most cases results in an increase of the interface roughness. 5,6,9 It will be shown that under optimized conditions the overall multilayer performance can be improved.…”

“…[1][2][3][4] Several studies have been performed using heating of the multilayer after deposition or using an elevated temperature during deposition. Post-deposition heating has been used to achieve small corrections of the d-spacing, 5 to investigate the temperature stability of the multilayer, 6,7 or to investigate the structural modifications of both multilayer materials. 8,9 The elevated substrate temperature during deposition has been used to optimize the performance of Mo/Si multilayers as x-ray reflectors by decreasing the interface roughness.…”

Characteristics of ion‐beam‐synthesized tantalum silicide film

“…Furthermore, in Fig. 1 a broad intensity band of 2Â ¾ 28°i ndicates an amorphous silicon structure, 14,15 and a characteristic silicon diffraction peak of 2Â ¾ 33°is evident in Fig. 2.…”

Layer-thickness dependence of the conductive properties of Mo/Si multilayers

“…Studies of the compositional depth profile of thermally evaporated and sputtered samples have been done for the Mo/Si system. 15,16 For sputtered samples, the interfacial width depends on the order of deposition, with Si on Mo yielding an abrupt interface, but with Mo on Si yielding a broad interface, approximately 25 Å thick. Thermal evaporation sources yielded abrupt interfaces, independent of the order of deposition.…”