On the High Electric Field Mobility Behavior in Si MOSFET's from Room to Liquid Helium Temperature

Abstract

The carrier mobility in N‐ und P‐channel MOSFET's at high transverse electric field is studied from room to liquid helium temperature. It is shown that the negative transconductance phenomenon obtained at high gate voltage is enlarged by decreasing the temperature. This behavior is attributed to a change in the mobility law for high transverse electric field. An accurate extraction method is proposed in order to determine the new parameters involved in the mobility and the drain current laws. These new relations are successfully employed for the fitting of experimental results obtained with MOS devices from various technologies.

Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

“…The effective mobility μ eff degradation due to the vertical gate field is expressed in terms of the charge at the source side q s as [29] μ eff = μ o 1 + θ 1 V th q s + θ 2 (V th q s ) 2 (18) where μ o is the low-field mobility, and θ 1 and θ 2 are the mobility attenuation factors of the first and second order, which can be extracted from the experimental data at low drain voltage using a modified Y-function method [30]. The parameter θ 2 is correlated with the surface roughness scattering, while θ 1 includes phonon scattering and Coulomb scattering.…”

“…Note that, for typical UTBB SOI devices, the term R th V d I ds /T o is of the order of 10 −2 , which makes possible the first-order expansion of the power term in (29) as…”

Device Physics and Electrical Performance of Bulk Silicon Mosfets

“…An example of such a behavior is given in Fig. 5 for N channe1 MOSFETs operated at various temperatures [31]. Tbis behavior can be interpreted as being the result of a higher order term in the denominator of Eq.…”

“…Tbis behavior can be interpreted as being the result of a higher order term in the denominator of Eq. 4b such that it reads [31]:…”

Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations

“…The effective mobility  eff degradation due to the vertical gate field is expressed in terms of the charge at the source side q s as [163]: 44 where  0 is the low-field mobility,  1 and  2 are the mobility attenuation factors of first and second order, which can be extracted from experimental data at low drain voltage using a modified Y-function method, as described in Section II.3. The parameter  2 is correlated to the surface roughness scattering, while  1 includes phonon scattering and Coulomb scattering.…”