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: The electron saturation velocity in Silicon MOS transistors with channel lengths in the range 0.1-0.8 pln is studied for temperatures between 4.2K and 300K. A new method for the evaluation of the saturation velocity in a MOS transistor is presented. This method enables the drift velocity at source end of the device to be determined as a function of the corresponding electric field. The results obtained by this new method are compared to the ones obtained by classically used techniques and to literature data collected on resistive gated MOS devices.

As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsa influence strongly the effective mobility. The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field [2], this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current Id versus gate voltage Vg Curves.

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The carrier mobility in N‐ und P‐channel MOSFET's at high transverse electric field is studied from room to liquid helium temperature. It is shown that the negative transconductance phenomenon obtained at high gate voltage is enlarged by decreasing the temperature. This behavior is attributed to a change in the mobility law for high transverse electric field. An accurate extraction method is proposed in order to determine the new parameters involved in the mobility and the drain current laws. These new relations are successfully employed for the fitting of experimental results obtained with MOS devices from various technologies.