On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs

Wang, Chih-Kai; Yu, Kuo-Hui; Chiou, Wen-Hui; Chen, Chun-Yuan; Chuang, Hung-Ming; Liu, Wen‐Chau

doi:10.1016/s0038-1101(02)00306-4

Cited by 12 publications

(8 citation statements)

References 13 publications

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“…Lattice-matched In 0.485 Ga 0.515 P/GaAs hetero-structures are becoming major III-V semiconductor systems, because compared with AlGaAs/GaAs systems, they have lower reactivity with oxygen, higher number of reduced DX centers [1], and lower interfacial recombination rates [2]. InGaP/GaAs hetero-structures are thus attractive alternatives to AlGaAs/GaAs systems for applications in hetero-structure field-effect transistors (HFETs) [3,4], hetero-junction bipolar transistors (HBTs) [5,6], high power lasers [7][8][9], and solar energy conversion devices [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Nakano

Shioda

Enomoto

et al. 2012

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Nakano

Shioda

Enomoto

et al. 2012

Journal of Crystal Growth

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“…Because of its superior properties with respect to AlGaAs, InGaP is a key material for several devices, like HBTs, HEMTs, solar cells and LEDs, which are currenly based on the InGaP/GaAs heterojunction [1][2][3][4]. For MOVPE grown InGaP/GaAs it has been shown by PL, X-ray diffraction and TEM that it is difficult to grow abrupt interfaces between InGaP and GaAs because there is no common group V element across the interface [5].…”

Section: Introductionmentioning

confidence: 99%

CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD

Frigeri¹,

Shakhmin²,

Vinokurov³

et al. 2011

Phys. Status Solidi (c)

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Dark field transmission electron microscopy by using both the (200) two beam diffraction mode and the high angle annular dark field (HAADF) method has been used to check the presence and composition of unwanted layer(s), that had formed at the place of the nominal 10 nm thick GaAs QW grown on top of the InGaP barrier in MOCVD InGaP/GaAs samples, and whose existence was suggested by cathodoluminescence. It is shown that the nominal 10 nm GaAs QW has been replaced by 2 layers: a thin one made of In0,15Ga0,85As0,80P0.20 closer to InGaP followed by a second one made of either GaAs0.91P0.09or In0,05Ga0,95As0,84P0.16. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Lattice-matched In 0:485 Ga 0:515 P/GaAs hetero-structures are becoming a major III-V semiconductor system, because compared to AlGaAs/GaAs systems, they have lower reactivity with oxygen, more reduced DX centers, 1) and lower interfacial recombination velocities. 2) Therefore, InGaP/GaAs heterostructures are attractive alternatives to AlGaAs/GaAs systems for applications in hetero-structure field-effect transistors (HFETs), 3,4) hetero-junction bipolar transistors (HBTs), 5,6) high power lasers, 7) and solar energy conversion devices. 8) Although metal organic vapor phase epitaxy (MOVPE) is suitable for mass production, controlling the hetero-interface structure is often complicated, and is a major problem in MOVPE.…”

Section: Introductionmentioning

confidence: 99%

Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy

Nakano

Shioda

Sugiyama

et al. 2009

jjap

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An InGaP layer grown by metal organic vapor phase epitaxy (MOVPE) often has an In-rich region within 5 nm from the top of the layer. This surface segregation degrades the interface abruptness of InGaP/GaAs systems, which is attractive for high-performance devices such as high electron mobility transistors (HEMTs). This segregation in lattice-matched InGaP/GaAs systems can be explained by considering a ''subsurface'' in which a surface adsorption layer controls the composition of grown epitaxial layers. In this study, the existence of a subsurface during MOVPE growth of InGaP was experimentally confirmed through kinetic analysis involving a flow modulation method. The kinetic parameters of a subsurface model, such as adsorption and desorption rate constants of each species, were estimated based on experimental data obtained from flow modulation, and then used to successfully explain the In surface segregation in InGaP-MOVPE. #

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On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs

Cited by 12 publications

References 13 publications

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD

Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy

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