On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Vanhellemont, Jan; Suezawa, Masashi; Yonenaga, Ichiro

doi:10.1063/1.3449080

Cited by 22 publications

(17 citation statements)

References 18 publications

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“…Vacancy trapping by germanium atoms was also claimed by Chen et al [14] based on density functional theory calculations although recent theoretical work of Chroneos et al [15] suggests that the impact of germanium is negligible compared to vacancy clusters themselves acting as trap/sink for vacancies. Also recent quenching experiments [16] and a study with scanning infrared microscopy of voids in as-grown Czochralski silicon crystals with and without germanium doping [17], both revealed only a limited impact of germanium doping on the thermal equilibrium vacancy concentration at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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During the last decade, the 300 mm silicon wafer has been optimized and one is studying the move to 450 mm crystals and wafers. The ever increasing silicon crystal diameter leads to two important trends with respect to substrate characteristics: the interstitial oxygen concentration decreases while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due to the large melt in which movements have to be controlled and partly suppressed by the use of magnetic fields. This magnetic confinement leads to a more uniform dopant incorporation but at the same time to a more limited transport of oxygen from the quartz crucible to the melt and the growing crystal. The reduced interstitial oxygen concentration and the lower thermal budget of modern device processing leads to strongly reduced oxygen precipitation and thus internal gettering capacity.The increasing COP size (accompanied by a decreasing density) is caused by the decreasing pulling rate and thermal gradient that have to be used in order to avoid dislocation formation. The slower cooling of the crystal leads to a decreased void nucleation rate and at the same time to an increased thermal budget for void growth as well as a larger number of vacancies available per void. Journal of Crystal Growth November 9, 2010 In the present paper the effect of germanium doping in the range between 10 16 cm −3 and 10 19 cm −3 on COP formation and oxygen precipitation is discussed and illustrated. Also the beneficial effect of germanium doping with respect to wafer breakage during processing, with respect to the suppression of thermal donor formation and with respect to improving device radiation hardness is addressed. Preprint submitted to

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Section: Introductionmentioning

confidence: 99%

Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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“…25,37 Heavy doping with Ge also leads to an apparent decrease of the formation energy of the vacancy which was shown to be due to the total vacancy increase during a high temperature anneal by the trapping effect. 35 An important difference is however that in heavily As and Sb doped Si, also the formation energy of the double negatively charged vacancy is considerably lowered and is much lower than that of the neutral vacancy. 34 Due to this lower formation energy, the free and trapped vacancy concentration is significantly higher than in Si doped with isovalent impurities, and therefore, also the effects on BMD nucleation are larger.…”

Section: à3mentioning

confidence: 99%

“…35 These concentrations of dopant-vacancy pairs are 4 and 3 orders of magnitude higher than the thermal equilibrium concentration of neutral vacancies at 1250 C which is about 3.7 Â 10 13 cm À3 at 1250 C. 34 A more extended report on this change of resistivity and its recovery during low temperature anneals will be published elsewhere. Similar trapping effects due to dopant-vacancy pair formation have been reported for Si doped with high concentrations of isovalent impurities Ge 36 and Sn.…”

Section: à3mentioning

confidence: 99%

Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

Zhang

Gao

et al. 2013

Journal of Applied Physics

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A comparative investigation is performed on the effects of vacancies induced by rapid thermal processing on oxygen precipitation behavior in heavily arsenic-and antimony-doped Czochralski silicon wafers. It is experimentally found that vacancy-assisted oxide precipitate nucleation occurs at 800, 900, and 1000 C in the Sb-doped wafers, while it only occurs at 800 C in the As-doped ones. Density functional theory calculations indicate that it is energetically favorable to form AsVO and SbVO complexes in As-and Sb-doped silicon crystals, respectively. These complexes might act as precursors for oxide precipitate nucleation under appropriate conditions. The difference between the effects of rapid thermal processing -induced vacancies on oxide precipitate nucleation in the heavily As-and Sb-doped Cz silicon crystals is tentatively elucidated based on density functional theory calculations revealing the difference in binding energies of AsVO and SbVO complexes. V C 2013 AIP Publishing LLC. [http://dx

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“…Carbon (C), germanium (Ge), tin (Sn) and lead (Pb) together with Si form group IV of the periodic system. Since they are 2) They affect, due to the induced stress fields, the equilibrium concentration of intrinsic defects [86], that is, vacancies and self-interstitials.…”

Section: Impact Of Isovalent Doping a Backgroundmentioning

confidence: 99%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Cited by 22 publications

References 18 publications

Germanium doping for improved silicon substrates and devices

Germanium doping for improved silicon substrates and devices

Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

Vacancy-oxygen defects in silicon: the impact of isovalent doping

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