2012 IEEE International Integrated Reliability Workshop Final Report 2012
DOI: 10.1109/iirw.2012.6468926
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On the impact of the layout of MOSFET test-structures on NBTI-, PBTI- and HCS-lifetime due to PID

Abstract: We introduce and discuss in our paper an alternative to protection diodes and compare it with different sizes and placements of diodes. In contrast to other PID publications we do not focus on the PID itself but on the impact on full transistorlifetime estimations. We evaluate long-term NBTI, PBTI and HCS experiments.

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Cited by 11 publications
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References 17 publications
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