Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage

Martin, Andreas; Koten, Andreas; Schwerd, Markus

doi:10.1109/iirw.2012.6468927

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Typically, hot electrons and electrostatic charges impact are distinguished by the fact that hot electrons (a case of direct current) are a process associated with a small current and a long time, and an electrostatic charge with a process associated with a large current and a short time. Accordingly, there are various methods When it comes to instability caused by the influence of a relatively small current left over from an electrostatic charge on the drain and the effect of hot electrons, the degradation of parameters can affect both output transistors and internal VLSI transistors [6,7].…”

Section: Introductionmentioning

confidence: 99%

Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation

Mustafayev¹,

Cherkesova²,

Khasanov³

et al. 2019

Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" Dedicated to the

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Resistance to electrostatic charges is one of the most important problems limiting the very large scale integrated circuits reliability. Increased currents cause the degradation of the instruments characteristics, similar to the degradation that occurs when hot electrons stream passes through. In order to increase the very large scale integrated circuits reliability, under hot electrons occurrence, exposure to ionizing radiation, electrostatic charges, and ion treatment, it is necessary to study the MIS transistors parameters degradation mechanisms. The results of the study show that the maximum the threshold voltage shift occurs when aluminum is sprayed onto the structure with a floating gate. The reason for the MIS transistors characteristics degradation is the charges of the gate electrode and the current in the oxide arising from strong electric fields. The degree of characteristics degradation in the hot electrons injection case does not depend on the energy of the ions bombarding the substrate surface.

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Section: Introductionmentioning

confidence: 99%