On the internal photoemission spectrum of PtSi/p-Si infrared detectors

Aslan, B.; Turan, Raşit

doi:10.1016/s1350-4495(01)00131-1

Cited by 15 publications

(10 citation statements)

References 19 publications

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“…This SE result confirms the formation of PtSi after RTA process. The thickness of sample A determined by SE analysis was 5 12.80 nm which was confirmed with high accuracy from HTEM image with 12.77 nm as shown in the Fig. 5.…”

Section: Resultssupporting

confidence: 65%

Optical characterization of the PtSi/Si by using spectroscopic ellipsometry

Kim

Park

et al. 2016

Journal of the Korean Physical Society

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We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data <ε> = <ε 1 > + i<ε 2 > of the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing Tauc-Lorentz and Drude models, the dielectric function (ε) of PtSi films were determined. We found that the composition ratio of Pt:Si is nearly 1:1 for PtSi monolayer and we observed transitions between occupied and unoccupied states in Pt 5d states. We also observed formation of PtSi layers in Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.

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Section: Resultssupporting

confidence: 65%

Optical characterization of the PtSi/Si by using spectroscopic ellipsometry

Kim

Park

et al. 2016

Journal of the Korean Physical Society

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“…Germanium (Ge) is a good candidate, but unfortunately it is still a relatively weak absorbing material at 1550 nm, moreover, the growth of this compound on silicon is still a challenge in terms of cost and complexity [46]. The latter is the exploitation of the internal photoemission effect (IPE) over the metalsemiconductor Schottky barrier [47]. Silicon infrared photodiodes based on the IPE are already used in the infrared (3-5 micron wavelength) imaging systems [48].…”

Section: Resonant Cavity Enhanced Silicon Photodetector At 155 µMmentioning

confidence: 99%

Micro and nanophotonics in silicon: new perspectives and applications

et al. 2009

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In the last few years, silicon photonics has been characterized by a wide range of applications in several fields, from communications to sensing, from biophotonics to the development of new artificial materials. In this communication, we report a review of the main results obtained in our laboratories in design, fabrication and characterization of new silicon-based optical structures and devices, including metamaterials, photodetectors, raman light amplifiers, and porous silicon based bio-chemical sensors and biochips. Future perspectives in integration of silicon based MEMS and MOEMS are also presented.

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“…GaAs/AlGaAs heterojunctions [3,13,16,17], PtSi-Si diode [18], Si/HfO2 interfaces [19], and a grapheneinsulator-semiconductor structures [10,11].…”

Section: Introductionmentioning

confidence: 99%

Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy

Wolde

Chauhan

Somvanshi

et al. 2019

Infrared Physics & Technology

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In this work, the activation energy obtained from the temperature dependent internal photoemission spectroscopy (TDIPS) and thermionic dark currents using GaAs/AlGaAs photodetectors are compared. Different barrier heights within the p-type GaAs/AlGaAs heterostructures are studied. The temperature dependent spectral response shows the red-shifting of the detector threshold wavelength for increasing temperature due to the decreasing band-offset. The activation energy extracted from Arrhenius plot of the dark current-voltage-temperature (I-V-T), and measured spectral response show the carrier activation energy increases with increasing Al mole fraction and decreases with increasing doping density. For Infrared detectors with ≤ 6.5 m, the Arrhenius analysis yields the values of activation energy with less than 5 % deviation from the actual or TDIPS fitting values. However, for detectors with longer threshold wavelengths (>> λ.3 m), activation energy extracted from the Arrhenius plot leads to energy values which deviate more than ~ 10 % from the corresponding TDIPS values. The higher percentage deviation (>> 10 %) of activation energy determined by Arrhenius plot from the corresponding TDIPS values attribute to the temperature dependent Fermi distribution tailing effect and Fowler-Nordheim tunneling current.

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On the internal photoemission spectrum of PtSi/p-Si infrared detectors

Cited by 15 publications

References 19 publications

Optical characterization of the PtSi/Si by using spectroscopic ellipsometry

Optical characterization of the PtSi/Si by using spectroscopic ellipsometry

Micro and nanophotonics in silicon: new perspectives and applications

Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy

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