On the investigation of d.c. plasmatron discharges by optical emission spectrometry

Schiller, S.; Heisig, U.; Steinfelder, K.; Strümpfel, J.; Voigt, R; Fendler, R.; Teschner, G.

doi:10.1016/0040-6090(82)90247-4

Cited by 52 publications

(13 citation statements)

References 4 publications

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“…Current voltage characteristics of magnetron discharges with oxygen were investigated by Depla et al and the observed behavior was linked to variations of the ion induced secondary electron emission [5]. Optical and mass spectrometric control of reactive plasmas was invented by Schiller et al [6] and Sproul and Tomashek [7,8], respectively.…”

Section: Introductionmentioning

confidence: 99%

Ion formation in an argon and argon-oxygen gas mixture of a magnetron sputtering discharge

et al. 2019

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Formation of singly and doubly charged Ar q+ and Ti q+ (q=1,2) and of molecular Ar 2 + , ArTi + , and Ti 2 + ions in a direct current magnetron sputtering discharge with a Ti cathode and argon as working gas was investigated with the help of energy-resolved mass spectrometry. Measured ion energy distributions consist of low-energy and high-energy components resembling different formation processes. Intensities of Ar 2 + and ArTi + dimer ions strongly increase with increasing gas pressure. Addition of oxygen gas leads to the formation of positively charged O + , O 2 + , and TiO + and of negatively charged O − and O 2 ions. ExperimentThe experimental set-up has been described in detail before [20][21][22]. The experiment is performed in a vacuum chamber which is pumped to a base pressure of less than 10 −5 Pa. Argon (purity 99.999%) and oxygen gas OPEN ACCESS RECEIVED

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Section: Introductionmentioning

confidence: 99%

Ion formation in an argon and argon-oxygen gas mixture of a magnetron sputtering discharge

et al. 2019

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“…Classical studies [1][2][3] on the control of reactive sputtering mainly consider secondary process variables like pressures, optical emissions or voltages to allow high-rate sputtering [4]. The authors of the present paper have provided a controloriented process model and controller design method [5] with respect to the high-rate sputtering problem.…”

Section: Literaturementioning

confidence: 99%

“…The input/output behavior of the reactive sputter process can be described by the state equation (1) and the output equation (2). The state equation…”

Section: Mathematical Modelmentioning

confidence: 99%

Plasma State Control of Reactive Sputter Processes

Woelfel¹,

Oberberg²,

Awakowicz³

et al. 2019

International Conference of Control, Dynamic Systems, and Robotics

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Nonlinear reactive sputter processes are indispensable for the deposition of functional thin film layers. As the coating process is driven by a low pressure plasma the plasma state affects the thin film properties. The process behavior has specific properties. It is unstable, one specific input value can lead to different values of the plasma state and the same plasma state can be achieved by different input values. This unstable and ambiguous behavior requires a control system, which consists of a stabilizing controller, an estimation unit and a feedforward controller. In this paper, a design method for the plasma state control based of an input/output-model is proposed. Experiments show the effectiveness of the proposed control method.

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“…To work successfully in such a quick dropped transition region, a rapid reactive gas control system is required. PEM (plasma emission monitor) is the most commonly adopted method and can also be used in combination with other techniques if required [10,11]. Besides that, to precisely control metal nitrides' gradual change to oxy-nitrides and oxides (i.e., (Ti,Al)N, (Ti,Al)(NO), Al 2 O 3 ) is an arduous task.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Photothermal Conversion Performance of Ti/(Mo-TiAlN)/(Mo-TiAlON)/Al2O3 Selective Absorbing Film for Non-Vacuum High-Temperature Applications

Geng

Chen

et al. 2020

Applied Sciences

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This paper aims to clarify the phase composition in each sub-layer of tandem absorber TiMoAlON film and verify its thermal stability. The deposited multilayer Ti/(Mo-TiAlN)/(Mo-TiAlON)/Al2O3 films include an infrared reflectance layer, light interference absorptive layers with different metal doping amounts, and an anti-reflectance layer. The layer thicknesses of Ti, Mo-TiAlN, Mo-TiAlON, and Al2O3 are 100, 300, 200, and 80 nm, respectively. Al content increases to 12 at.% and the ratio of N/O is nearly 0.1, which means nitride continuously changes to oxide. According to X-ray Diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) results, the diffraction peak that appears at 2θ = 40° demonstrates that Mo element aggregates in the substitutional solid solution (Ti,Al)(O,N) columnar grain. TiMoAlON films have low reflectivity in the spectrum range of 300–900 nm. When Al content is more than 10 at.%, absorptivity is almost in the spectrum range from visible to infrared, but absorptivity decreases in the ultraviolet spectrum range. When Al content is increased to 12 at.%, absorptivity α decreases by 0.05 in the experimental conditions. After baking in atmosphere at 500 °C for 8 h, the film has the highest absorptivity when doped with 2 at.% Mo. In the visible-light range, α = 0.97, and in the whole ultraviolet-visible-light near-infrared spectrum range, α = 0.94, and emissivity ε = 0.02 at room temperature and ε = 0.10 at 500 °C.

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On the investigation of d.c. plasmatron discharges by optical emission spectrometry

Cited by 52 publications

References 4 publications

Ion formation in an argon and argon-oxygen gas mixture of a magnetron sputtering discharge

Ion formation in an argon and argon-oxygen gas mixture of a magnetron sputtering discharge

Plasma State Control of Reactive Sputter Processes

Microstructure and Photothermal Conversion Performance of Ti/(Mo-TiAlN)/(Mo-TiAlON)/Al2O3 Selective Absorbing Film for Non-Vacuum High-Temperature Applications

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