On the Mathematical Theory of the Linearly-Graded P-N Junction

Abstract

This paper presents a numerical analysis of the mechanisms of operation within a linearly-graded p-n junction. Considered in this analysis are three important modes of junction operation: equilibrium, forward bias. and reverse bias in the collector junction. In addition. calculations of electrical space-charge layer capacitance are presented for the forward-biased linearly-graded junction. The conclusions derived are compared, in graphical form, with the results of previous investigations of the linearly-graded junction.

Semiconductor measurement technology

“…How can the seemingly conflicting answers [17,18] to these claims be resolved? 3. A method has been suggested for theoretically testing the validity of the Schottky equations [15,16] What are the proper definitions [19,20,21] [23][24][25][26][27][28].…”

“…In the traditional thermally stimulated capacitance (TSCAP) measurement [23,24] [20][21][22] [26], the discharge transient is observed directly after the device has been switched from charging bias to depletion bias at a fixed temperature.…”

Numerical solution of Poisson's equation in two-dimensions (2D) for linearly-graded pn junction of silicon

“…For a linearly graded junction of Fig. 2a the impurity concentration is given by (Zambuto 1989;Kennedy and O'Brien 1967)…”

A General theory of p–n junction capacitance

“…The [7] showed that the J. E. PAFLROTT and L. PR. LEONIDOU condition of zero current did not involve serious errors except a t large forward bias.…”