On the mechanism of electronic transport in polycrystalline CdO thin films

Dantus, C.; Rusu, R. S.; Rusu, G.I.

doi:10.1016/j.spmi.2011.07.008

Cited by 17 publications

(3 citation statements)

References 21 publications

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“…The carrier concentration of CdO, which can be strongly affected by the processing conditions, is reported to be varying from 10 18 to 10 20 cm −3 in literatures . Table lists the room‐temperature carrier concentration n and mobility μ of the present CdO samples.…”

Section: Resultsmentioning

confidence: 97%

Enhanced high‐temperature thermoelectric performance of CdO ceramics with randomly distributed micropores

Liu

Gao

et al. 2017

J Am Ceram Soc

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CdO ceramics with randomly distributed micropores were synthesized by the conventional solid-state reaction method via adding polymethyl methacrylate (PMMA) as the void forming agent. The introduction of microsized pores can significantly affect both electrical and thermal transport properties of the CdO matrix, and possible underlying mechanisms are discussed. Due to the dramatically reduced thermal conductivity, a highest ZT value of~0.51 has been achieved in the porous CdO at about 1000 K, increased by about 52% as compared to that of the dense sample without PMMA addition. This work demonstrates that introducing microsized pores is a very simple, low-cost, and efficient strategy to improve the high-temperature thermoelectric performance of CdO ceramics. K E Y W O R D S

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Section: Resultsmentioning

confidence: 97%

Enhanced high‐temperature thermoelectric performance of CdO ceramics with randomly distributed micropores

Liu

Gao

et al. 2017

J Am Ceram Soc

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“…Where C represents the lattice constant of the CdO thin film estimated from XRD data and O C is the standard lattice constant for the unstrained CdO [11]. The negative value of the strain (− 0.068%) reveals the compressive strain of the CdO.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Nanocrystalline CdO Thin Film Growth by Solid-Vapor Deposition

Zaien

Ahmed

Hassan

2012

AMR

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Nanocrystalline cadmium oxide (CdO) thin film was successfully synthesized by a vapor transport process (solid-vapor deposition) without catalyst. Cadmium powder was heated to 1235 K in a tube furnace, and the resultant vapor was carried to the silicon substrate zone by a flow argon gas with oxygen. Scanning electron microscopy revealed that the product was of nanocrystalline cadmium oxide. X-ray diffraction and energy dispersive X-ray techniques were used to characterize structural properties. The grown nanocrystalline thin film had a grain size of 35 nm. Photoluminescence spectroscopy was conducted to investigate the optical properties of the CdO. The red-shift direct band gap energy of the nanocrystalline CdO was at 511 nm (2.43 eV), whereas that of CdO bulk was at 491 nm (2.5 eV).

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“…Materiales micro, nano y policristalinos han suscitado un especial interés durante los últimos años, debido a sus potenciales aplicaciones en dispositivos optoelectrónicos, tales como, sensores transistores y celdas solares fotovoltaicas (Chen et al 2011, Chen et al 2012, Kang et al 2012, Miller et al 2012, Kim et al 2013. Es de anotar, que el estudio y comprensión, tanto teórico como experimental, de los mecanismos de transporte de carga que gobiernan a este tipo de materiales, continúan siendo poco claros y dependen, en general, de la densidad de estados (DOS), la posición del nivel de Fermi y el campo aplicado, entre otros (Dantus et al 2011, Shen et al 2013.…”

Section: Introductionunclassified

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Dussán

Mesa²

2014

Univ. Sci.

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Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu 3 BiS 2 and Cu 2 ZnSnSe 4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(E F) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

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On the mechanism of electronic transport in polycrystalline CdO thin films

Cited by 17 publications

References 21 publications

Enhanced high‐temperature thermoelectric performance of CdO ceramics with randomly distributed micropores

Enhanced high‐temperature thermoelectric performance of CdO ceramics with randomly distributed micropores

Structural and Optical Properties of Nanocrystalline CdO Thin Film Growth by Solid-Vapor Deposition

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

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