On the nature of the 3.41 eV luminescence in hexagonal GaN

Fischer, Stefan; Steude, G.; Hofmann, Detlev M.; Kurth, F.; Anderš, F.; Topf, M.; Meyer, B. K.; Bertram, F.; Schmidt, Michael; Christen, J.; Eckey, L.; Holst, J.; Hoffmann, A.; Mensching, B.; Rauschenbach, B.

doi:10.1016/s0022-0248(98)00194-8

Cited by 83 publications

(55 citation statements)

References 8 publications

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“…For the FX, we obtained the best fit for E͑0͒ = 3.478 eV, ␣ = 0.80 meV/ K, and ␤ = 800 K. These values are in the range of those reported for c-and a-plane GaN. 18 At low temperature, A excitons are essentially localized on donors but they escape when the temperature is increased above ϳ50 K. In agreement with previous observations in c-plane 19 and a-plane GaN, 20 the BSF energy position follows an "Sshaped" temperature dependence consisting in a small redshift from 8 to 25 K followed by a blueshift that eventually merges with some Varshni curve for temperatures above 75 K.…”

Section: Localization Effectssupporting

confidence: 89%

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir

Lefèbvre

Levrat

et al. 2009

Journal of Applied Physics

104

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We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth ͑ELO͒ GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane GaN: I 1 basal stacking fault. Cathodoluminescence measurements show that these stacking faults are essentially located in the windows and the N-face wings of the ELO-GaN and that they can appear isolated as well as organized into bundles. Time-integrated and time-resolved photoluminescence, supported by a qualitative model, evidence not only the efficient trapping of free excitons ͑FXs͒ by basal plane stacking faults but also some localization inside I 1 stacking faults themselves. Measurements at room temperature show that FXs recombine efficiently with rather long luminescence decay times ͑360 ps͒, comparable to those encountered in high-quality GaN epilayers. We discuss the possible role of I 1 stacking faults in the overall recombination mechanism of excitons.

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Section: Localization Effectssupporting

confidence: 89%

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir

Lefèbvre

Levrat

et al. 2009

Journal of Applied Physics

104

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“…Monoexponential fits to the initial decay of the transients in figure 10 give decay times of 0.4 ns at 3.42 eV, 3.2 ns at 3.33 eV and 15 ns at 3.29 eV. For I 1 BSFs, a number of other groups have measured PL or CL transients [18,25,68,[76][77][78][79]. The reported initial decay times vary over an order of magnitude, ranging from 70 ps [77] up to 780 ps [78].…”

Section: Time-resolved Luminescence Spectroscopymentioning

confidence: 91%

“…This difference was ascribed to a variety of electron-hole overlaps present in the case of electronically coupled bundles of BSFs compared to isolated BSFs. Such a coupling between BSFs, but also a coupling to dopants in their vicinity (see next section) as well as differences in the nonradiative recombination rates depending on the employed growth technique [76] can explain the range of different decay times observed for I 1 BSFs in [25,68,[76][77][78][79].…”

Section: Time-resolved Luminescence Spectroscopymentioning

confidence: 98%

“…As first pointed out by Rieger et al [21] and Rebane et al [22], these WZ/ZB heterostructures may be pictured as ZB quantum wells (QWs) in a WZ matrix leading to emission at energies lower than for excitons in the bulk WZ phase, which in GaN is found at 3.478 eV [23]. While transitions associated with excitons bound to BSFs of the intrinsic I 1 type are well established to lie in the range of 3.40 to 3.42 eV [6,11,[24][25][26][27][28][29], there are fewer reports on luminescence lines associated with BSFs of the intrinsic I 2 type [5,[30][31][32]. Only recently, we reported emission peaks related to extrinsic BSFs [32], and Jacopin et al [33] observed luminescence lines associated with ZB segments.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

108

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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“…This is because the 3.40 peak can be mixed with the LO phonon replica of the DX peak since the relative contribution of the latter increases with temperature. A model 25 has been proposed for this frequently reported emission 26,27,28 based on recombination of an exciton bound to an I 1 type stacking fault in GaN. In this model, the stacking fault is similar to a cubic quantum well in wurtzite GaN.…”

Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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Cathodoluminescence ͑CL͒ imaging and temperature-dependent cathodoluminescence spectroscopy ͑CLS͒ have been used to probe the spatial distribution and energies of electronic defects near GaN/Al 2 O 3 interfaces grown by hydride vapor phase epitaxy ͑HVPE͒. Cross sectional secondary electron microscopy imaging, CLS, and CL imaging show systematic variations in defect emissions with a wide range of HVPE GaN/sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry provide a consistent picture of near-interface doping by O out-diffusion from Al 2 O 3 into GaN over hundreds of nanometers. Low-temperature CL spectra exhibit a new donor level at 3.447 meV near the interface for such samples, characteristic of O impurities spatially localized to the nanoscale interface. CLS emissions indicate the formation of amorphous Al-N-O complexes at 3.8 eV extending into the Al 2 O 3 near the GaN/sapphire interface. CLS and CL images also reveal emissions due to excitons bound to stacking faults and cubic phase GaN. The temperature dependence of the various optical transitions in the 10-300 K range provides additional information to identify the near interface defects and impurity doping.

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On the nature of the 3.41 eV luminescence in hexagonal GaN

Cited by 83 publications

References 8 publications

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Luminescence associated with stacking faults in GaN

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

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