On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

Goldman, E. I.; Nabiev, A. E.; Naryshkina, V. G.; Чучева, Г. В.

doi:10.1134/s1063782619010093

Semiconductors

2019

DOI: 10.1134/s1063782619010093

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On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

E. I. Goldman

A. E. Nabiev

V. G. Naryshkina

et al.

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2019

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On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

Cited by 1 publication

References 14 publications

On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels

On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels

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