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This paper considers some problems of relaxation spectroscopy of localised electron states in semiconductors, dielectrics and their interfaces. We discuss the difficulties in the energy assignment of distributed states, the inaccuracy involved in the procedure of obtaining the energy dependence of the electron capture cross section from the temperature variation of the effective energy level, the lack of adequate spectroscopic algorithms for non-thermionic emptying mechanisms of deep levels, the ambiguities in interpretation of spectroscopic results in the absence of a priori information about t h e mechanisms of emptying of localised states, etc. The approaches which allow the solution of all the above problems are developed. Firstly problems of the spectroscopy of thermionically emptied states are considered. Secondly a novel method, so-called dynamic relaxation spectroscopy, is described. Thirdly a theory of spectroscopy of localised electron states with an a priori known mechanism of field-induced emptying is established. Finally a relaxation spectroscopy scheme for the case of absence of a priori information about the state emptying mechanism is suggested.

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