Untitled

Goldman, E. I.; Gulyaev, Yu. V.; Zhdan, A. G.; Чучева, Г. В.

doi:10.1023/a:1011940712139

Cited by 6 publications

(6 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(iv) sharp growth of current with voltage. The observed feature of the I-V characteristics of the single crystal MnGa 2 Se 4 samples is typical of many high resistivity semiconductors and structures on their basis [7][8][9][10][11][12]. In the analysis of the I-V char acteristics of the single crystal MnGa 2 Se 4 samples (In-MnGa 2 Se 4 -In structures) measured in a wide electric field range, we took into account the presence of different portions clearly distinguished in the dependence of exponent α on the electric voltage applied to the structure when describing the I-V char acteristics in the form I ∝ V α .…”

mentioning

confidence: 81%

Current-voltage characteristics of MnGa2Se4 single crystals

Тагиев

Asadullayeva

et al. 2012

Semiconductors

View full text Add to dashboard Cite

field controlled lasers, light modulators, electric and optical memory elements, and other func tional optoelectronic devices. In the last few years, the emphasis in the study of these compounds has been on their structural [1], magnetic [2], and optical proper ties [3][4][5][6]. Figure 1 presents the current-voltage (I-V) char acteristics of the MnGa 2 Se 4 single crystals. The fol lowing portions are clearly distinguished:(i) sharp growth of current with voltage;(ii) sublinear dependence of current on voltage;(iii) quadratic dependence of current on voltage; and (iv) sharp growth of current with voltage. The observed feature of the I-V characteristics of the single crystal MnGa 2 Se 4 samples is typical of many high resistivity semiconductors and structures on their basis [7][8][9][10][11][12]. In the analysis of the I-V char acteristics of the single crystal MnGa 2 Se 4 samples (In-MnGa 2 Se 4 -In structures) measured in a wide electric field range, we took into account the presence of different portions clearly distinguished in the dependence of exponent α on the electric voltage applied to the structure when describing the I-V char acteristics in the form I ∝ V α .Using the I-V characteristics presented in Fig. 1, we determined the dependences α(V) for the MnGa 2 Se 4 single crystals; the results are shown in Fig. 2. It can be seen that at low voltages, α sharply decreases, passes through its minimum, and, with a further increase in voltage, attains its maximum value. We denote the minimum and maximum values of the differential power as α m and α M , respectively, and the corresponding currents and voltages as I m , V m and I M , V M . According to the data presented in Fig. 2, for the sample with the thickness L = 7 × 10 -3 cm and the contact area S = 4 × 10 -2 cm 2 , we determined the fol lowing extreme values at 300 K: α m = 0.6, I m = 10 -13 A, V m = 10.1 V, α M = 6.5, I M = 8 × 10 -12 A, and V M = 365 V.Similar results were obtained for other samples at different temperatures. Knowing the values of α m , I m , Abstract-The current-voltage characteristics of single crystal MnGa 2 Se 4 samples have been studied. The measurements have been performed in the electric field range from the range of validity of Ohm's law to 10 V/cm at temperatures of 300-400 K. The data obtained are discussed within the context of the theory of injection contact phenomena and field ionization of traps due to the Poole Frenkel effect.

show abstract

mentioning

confidence: 81%

Current-voltage characteristics of MnGa2Se4 single crystals

Тагиев

Asadullayeva

et al. 2012

Semiconductors

View full text Add to dashboard Cite

show abstract

“…The electrophysical properties of the obtained heterostructures were studied on the measuring bench described in the studies [17][18]. Scanning probe microscopy studies were performed using Ntegra Prima nanolaboratory (NT-MDT SI, Russia) in piezoresponse force microscopy (PFM) mode using NSG10/Pt cantilever (Tipsnano, Tallinn, Estonia).…”

Section: Technology Of Obtaining Mdm Structures and Experiments Proce...mentioning

confidence: 99%

The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

Afanasiev

D.A.

Kiselev

et al. 2022

Physics of the Solid State

View full text Add to dashboard Cite

Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1-xO3 (PZT). Comparative results of electrophysical properties of three different metal--dielectric--metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni. Keywords: metal--dielectric--metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.

show abstract

“…2 The rate G v of minority charge carrier generation through the bulk levels localized in a layer of the semiconductor's space charge is proportional to the width of the generation band W v < W; W v is maximum at the moment when the depletion voltage is applied to the gate; it continuously declines with time until the equilibrium state of inversion is established. Hence, G v and the bulk generation current I v ~ G v falls monotonously with time [6,8].…”

mentioning

confidence: 93%

“…As is shown in [6], the initial stage of surface generation is rather short. For time t 1 ~ 10 -5 s, the quasi-equilibrium between the majority charge carriers captured τ eff 1 -by the interface generation centers and the free minority charge carriers stored near the interface is fixed, while the rate of electron-hole pair generation drops sharply as exp ( E g /2 kT ) .…”

mentioning

confidence: 96%

“…The figure shows, as a function of V g , typical curves for the kinetics of the hole generation current in an n-Si MOS structure with a stepwise change in the oxide layer thickness, measured at 293 K on the computerized experimental setup [7]. The areas of the common gate under the thin (h 1 = 100 Å) oxide layer and above the thick (h 2 = 3200 Å) layer are S 1 = 4 × 10 -4 cm 2 and S 2 = 4.405 × 10 -4 cm 2 , respectively.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

et al. 2005

Self Cite

View full text Add to dashboard Cite

A metal-oxide-semiconductor (MOS) structure with the common field electrode insulated from the semiconductor by oxide layers h of different thicknesses allows the surface generation rate of minority charge carriers from current I(t) of nonequilibrium depletion state relaxation to be found. At the same time, it is possible in similar structures to observe the kinematics of electron-hole pair generation at the periphery of the field electrode (the edge generation effect). Measurements performed on an n-Si MOS structure with a stepwise change in oxide layer thickness (h 1 = 100 Å and h 2 = 3200 Å) allowed the generation rate at both the initial transient (t ~ 10 -5 s) stage of surface generation (4.34 × 10 10 cm -2 s -1 ) and at the basic extremely slow stage (10.4 cm -2 s -1 ) to be reliably determined for the first time. The estimated peripheral generation rate of minority charge carriers (holes) was 7.8 × 10 11 cm -2 s -1 .

show abstract

Untitled

Cited by 6 publications

References 32 publications

Current-voltage characteristics of MnGa2Se4 single crystals

Current-voltage characteristics of MnGa2Se4 single crystals

The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

Contact Info

Product

Resources

About