Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

Goldman, E. I.; Kukharskaya, N. F.; Narishkina, V. G.; Чучева, Г. В.

doi:10.1134/s1063782611070098

Cited by 10 publications

(7 citation statements)

References 10 publications

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“…Relations for the average values α 2ρ could be obtain by substitution of the second-order approximations of the considered concentrations (8a)-(10a) and their the first-order approximations into the relation (11) ( ) 2 1 2 1 2 1 10 10 00 10 01 00 10 01 01 11 20 00 01 VV IV II II IV IV II IV IV IV VV II Value of the parameter α 2C and final form of the appropriate equation depend on value of the parameter γ.…”

Section: Methods Of Solutionmentioning

confidence: 99%

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Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

Pankratov¹,

Bulaeva²

2015

IJRAP

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Section: Methods Of Solutionmentioning

confidence: 99%

“…One of the actual questions of the solid state electronics is increasing of integration rate of elements of integrated circuits [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. At the same time with decreasing of integration rate of elements of integrated circuits one can find decreasing of dimensions of the elements.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

Pankratov¹,

Bulaeva²

2015

IJRAP

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“…Substitution of the series (13) into Eqs. (11) and conditions (12) gives us possibility to obtain equations for initial-order approximations of concentrations of point defects…”

Section: Methods Of Solutionmentioning

confidence: 99%

“…In the present time performance of elements of integrated circuits (p-n-junctions, field-effect and bipolar transistors, ...) and their discrete analogs are intensively increasing [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. To solve the problem they are using several ways.…”

Section: Introductionmentioning

confidence: 99%

“…One of them is manufacturing new materials with higher speed of charge carriers [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Another way to increase the performance is elaboration of new technological processes or modification of existing one [1][2][3][4][5][6][7][8][9][10][11][12][13][14]19,20]. In this paper we introduce one of approaches of modification of technological to increase performance of bipolar transistor.…”

Section: Introductionmentioning

confidence: 99%

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An Approach to Decrease Dimensions of Drift Hetero-Bopolar Transistors

E.L¹,

E.A²

2014

IJCSA

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In this paper based on recently introduced approach we formulated some recommendations to optimize manufacture drift bipolar transistor to decrease their dimensions and to decrease local overheats during functioning. The approach based on manufacture a heterostructure, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to increase homogeneity of distributions of concentrations of dopants in emitter and collector and specific inhomogenous of concentration of dopant in base and at the same time to increase sharpness of p-n-junctions, which have been manufactured framework the transistor. We obtain dependences of optimal annealing time on several parameters. We also introduced an analytical approach to model nonlinear physical processes (such as mass-and heat transport) in inhomogenous media with time-varying parameters.

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On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure

Pankratov

Bulaeva

2017

MMMS

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Purpose The purpose of this paper is to analyze the manufacturing of diffusion-junction heterorectifier with account relaxation of mismatch-induced stress. On the basis of the analysis, the authors formulate recommendations to increase sharpness of the p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Design/methodology/approach The authors formulate recommendations to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. To formulate the recommendations, the authors analyzed the manufacturing of the junction. The authors introduce an analytical approach to analyze the manufacturing. Findings The authors find a possibility to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Originality/value The results are original.

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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

Cited by 10 publications

References 10 publications

Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

An Approach to Decrease Dimensions of Drift Hetero-Bopolar Transistors

On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure

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