2018
DOI: 10.1088/1757-899x/446/1/012010
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On the optimization of InGaP/GaAs/InGaAs triple-junction solar cell

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Cited by 4 publications
(2 citation statements)
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“…Although not modelled in this study, the photovoltage could theoretically be increased further with minimal impact on the photocurrent by using In-GaP/GaAs/InGaAs cells, since the subcell band gaps are slightly wider than those of InGaP/(In)GaAs/Ge cells, particularly for the bottom subcell. [35,39] However, such cells are still under development.…”
Section: Computational Analysismentioning
confidence: 99%
“…Although not modelled in this study, the photovoltage could theoretically be increased further with minimal impact on the photocurrent by using In-GaP/GaAs/InGaAs cells, since the subcell band gaps are slightly wider than those of InGaP/(In)GaAs/Ge cells, particularly for the bottom subcell. [35,39] However, such cells are still under development.…”
Section: Computational Analysismentioning
confidence: 99%
“…The high performance of these devices is due to mature epitaxial growth techniques and optimally designed current-matched tandem structures. A conversion efficiency over 30% has been achieved under the one-sun air mass 1.5 (AM1.5G) spectra condition using GaInP/GaAs/Ge (or InGaAs) triple-junction (TJ) solar cells [3][4][5]. However, this is too expensive to cost down the III-V solar cells because the underlying Ge substrate or InGaAs epilayer grown on InP substrate is very expensive compared to the cost of Si [6,7].…”
Section: Introductionmentioning
confidence: 99%