On the optimization of the gallium arsenide injection laser for maximum CW power output

Vilms, J.; Wandinger, L.; Klohn, Kenneth L.

doi:10.1109/jqe.1966.1073832

Cited by 19 publications

(5 citation statements)

References 10 publications

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“…In order to discuss this effect, the rate Equations 3 and 4 may be used provided allowance is made for the discrete nature of x and y, by incorporating the quantum noise operators f~(t), f~(t) for electrons and holes respectively. Adding the operator fx(t) to the RHS of Equation 3 and f~(t) to the RHS of Equation 4 provides a simple means of describing the noise in the iasing mode and the corresponding electron concentration [5,[21][22][23].…”

Section: Quantum Noisementioning

confidence: 99%

Rate equations and transient phenomena in semiconductor lasers

Adams

1973

Opto-electronics

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This contribution attempts to review certain resonance effects which occur in the dynamic behaviour of semiconductor lasers. To study these effects theoretically, a rate equation approach is used for single-mode operation in the region of lasing threshold.The tWo basic rate equations are given and their transient solutions discussed. The existence of two time constants in these equations, viz. the electron lifetime % and the photon lifetime rp., gives rise to a characteristic resonance frequency in the GHz region. This resonance manifests itself in transient 'spiking' effects, in quantum noise phenomena, and in high-frequency modulation experiments. In a modified form the resonance frequency may also be studied in lasers with external cavities and in double-diode configurations (or, equivalently, conventional devices with non-uniform excitation along the cavity length).In the latter two examples mentioned above, the resonance is excited by optical feedback of the laser radiation into the active medium via a 'lossy' or insufficiently inverted region. In the 'spiking' oscillations commonly observed at the commencement of laser operation, the initial 'population overshoot' isthe cause of the resonance. For the case of quantum noise it is the requirement that the photon and electron populations have integer values which supplies the driving force-a true quantum effect. High-frequency modulation experiments directly reveal the same resonance frequency where a strong maximum in modulation intensity occurs.

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Section: Quantum Noisementioning

confidence: 99%

Rate equations and transient phenomena in semiconductor lasers

Adams

1973

Opto-electronics

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“…* The magnitude of Q is proportional to the bandwidth A E of the emitted light, since Q may be written as [6] Q = m/M oc AE/E~p with M the total number of possible modes within the volume of the active layer and Esp the halfwidth of the spontaneous emission spectrum. The factor Q takes into account those carrier recombination processes per unit volume which emit photons into the lasing modes.…”

Section: Theorymentioning

confidence: 99%

“…Various models have been used to describe transient phenomena in semiconductor lasers [2,5] and to evaluate in steady state conditions the photon number in diode laser cavities [6] and in compound systems, such as a diode within an external resonator [7,8], double diodes [8][9][10][11] and optical coupled diodes [12]. Various models have been used to describe transient phenomena in semiconductor lasers [2,5] and to evaluate in steady state conditions the photon number in diode laser cavities [6] and in compound systems, such as a diode within an external resonator [7,8], double diodes [8][9][10][11] and optical coupled diodes [12].…”

Section: Introductionmentioning

confidence: 99%

Rate equation approach for diode lasers

1974

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The light output and the electron density within the active layer of a semiconductor laser have been calculated from the steady state solution of a rate equation approach. The assumed rate equation model takes into account the spontaneous emission into the lasing modes. Simple analytical approximation formulae have been found under the assumption of a power-law dependence between optical gain g and electron density n (g oc nl). The approximations are compared with numerical results from the rate equations. With the exception of a small region near the lasing threshold good agreement has been found.The theoretical results are compared with experimentally measured light outputs from single and double heterostructure lasers. From the comparison below threshold the power law exponent / may be evaluated. The comparison at threshold suggests that the spontaneous emission term decreases at threshold. This decrease is in agreement with experimentally measured changes of the emission bandwidth at threshold.

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“…Вилмс и др. 219 определили оптимальную площадь для лазеров на GaAs, работающих в непрерывном режиме, взяв эффективность из формулы (48), а вероятности излучения -из (34) и (35), полученных Лашером и Стерном 19 в приближении параболи-ческих зон. Оптимальная лазерная площадь, полученная таким способом, составляет при 77° К около 10~4 см 2 219 .…”

Section: *unclassified

Инжекционные Лазеры

Pilkun¹

1969

Usp. Fiz. Nauk

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On the optimization of the gallium arsenide injection laser for maximum CW power output

Cited by 19 publications

References 10 publications

Rate equations and transient phenomena in semiconductor lasers

Rate equations and transient phenomena in semiconductor lasers

Rate equation approach for diode lasers

Инжекционные Лазеры

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