A new method for the study of radiative recombination in uniformly doped semiconductors has been developed and applied to p-type gallium arsenide. The bulk quantum efficiency is obtained by measurement of photoluminescence as a function of the penetration length of the exciting radiation. Using an estimated electron mobility, the total recombination lifetime of electrons (minority carriers) is found from this photoluminescence measurement and also independently by the measurement of surface photovoltage. The radiative lifetime is determined from the bulk quantum efficiency and the total electron lifetime. The model on which these measurements are based accounts for the principal factors affecting the intensity of photoluminescence, i.e., bulk quantum efficiency, surface recombination, and refraction and reflection of luminescence at the sample surface. The model is consistent with the experimental data for the p-type gallium arsenide samples studied. The bulk quantum-efficiency values obtained here are 8% at 300°K and 28% at 80°K for two higher-efficiency samples and 6 times lower for a third sample. The radiative lifetime of electrons is found to be approximately 2×10−8 sec at 300°K, and 3×10−10 sec at 80°K. The total lifetime of electrons (minority carriers) is found to be approximately 1.5×10−9 sec at 300°K and 10−10 sec at 80°K for the two higher-efficiency samples, and 10−10 sec at both temperatures for the third sample.

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Operating life data taken at 70 and 80°C at an output power level of 30 mW cw from one facet are presented for a protonisolated stripe, (Ga, Al)As Thin Active Layer DH laser grown by Organo-Metallic Vapor Phase Exitaxy, and mounted epi-side up on a Si submount with Sn solder. Median life of 450 h at 80°C ambient and 2500 h at 70°C ambient was observed. The failure mode is gradual increase of threshold current combined with decrease of the kink power level below the operating point.