The growth and properties of LPE GaAs

Vilms, J.; Garrett, J.P.

doi:10.1016/0038-1101(72)90115-3

Cited by 79 publications

(21 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In [62][63][64][65] or Ge, Sn on the anion site, 66,67 those with cation dopants in this case show higher mobilities. Even though GaAs is generally considered a covalent compound, its valence band has more contribution 68 from As states, this aligns again with Ioffe's picture illustrated in Fig.…”

mentioning

confidence: 99%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

View full text Add to dashboard Cite

In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped PbSe by studying n-type samples doped with Br, In and Bi. We propose that cation and anion dopants lead to a difference in mobility at high concentrations. This can be understood considering the predominance of cation states to the conduction band and anion states to the valence band. For higher mobility and better performance for most applications of heavily doped semiconductors, dopants should be on the site that is of less influence on the chargeconducting band. This concept can be viewed as an analog of modulation doping on the atomic level. Its physical origin is the random potential due to disorder that perturbs carriers, which is also the origin of Anderson localization at low temperature, a well-studied topic in theoretical physics. In thermoelectric PbSe, the selection of dopant can lead to 10% difference in mobility and in zT.

show abstract

mentioning

confidence: 99%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Tin is selected as n-type dopant in spite of its amphoteric property because of its extremely low vapour pressure, low segregation coefficient under the epitaxial growth elsewhere (Harris and Synder 1969;Vilms and Garrett 1972;Rosztoczy and Kinoshita 1974;Toyada et al 1976).…”

Section: Doping Study With Tinmentioning

confidence: 99%

“…The use of liquid phase epitaxy to grow GaAs layers onto GaAs substrates was pioneered by Nelson (1963) using a tipping furnace. Subsequently, horizontal sliding (Mlavsky and Weinstein 1963), vertical dipping (Shih et al 1962) and rotating methods (Vilms and Garrett 1972) have been used for layer growth along with every variety of boat and slider designs. Multiple-layer structures have wide applications in the fabrication of opto-electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Wei

Lü

et al. 1986

Bull. Mater. Sci.

View full text Add to dashboard Cite

Abslraet. Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carder concentrations of films varying from 1016 to 1017 cm-3 could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1-84 x 10-4 at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.

show abstract

“…To insure m i n im u m or zero cross-contamination and compensation, the dopants must have low vapor pressure and low distribution coefficient under the epitaxial growth conditions. Table I compares the vapor pressure (14) and the distribution coefficient of the best k n o w n u n c o m p e nsated dopants of GaAs (7,9,15,16). Sn and Ge have the lowest distribution coefficients and also have vapor pressure m a n y orders of magnitude lower t h a n the other dopants.…”

Section: J Electrochem Soc: S O L I D -S T a T E S C I E N C E A Nmentioning

confidence: 99%

“…This was Paper 229 presented at the Miami Beach, Florida, Meeting of the Society, Oct. [8][9][10][11][12][13] 1972.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Growth and Evaluation of Epitaxial GaAs for Microwave Devices

Rosztoczy

Kinoshita

1974

J. Electrochem. Soc.

View full text Add to dashboard Cite

The growth and properties of LPE GaAs

Cited by 79 publications

References 14 publications

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Growth and Evaluation of Epitaxial GaAs for Microwave Devices

Contact Info

Product

Resources

About