On the origin of free carriers in high‐conducting n‐GaN

Seifert, Werner; Franzheld, R.; Butter, E.; Sobotta, H.; Riede, V.

doi:10.1002/crat.2170180314

Cited by 141 publications

(49 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Ref. [8] injection of H 2 O during growth lead to higher [19], whereas as shown above the residual donor level is much shallower than the L1 -L4 levels.…”

Section: Discussionmentioning

confidence: 76%

Fine Structure of the 3.42 eV Emission Band in GaN

et al. 1995

View full text Add to dashboard Cite

A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been tentatively assigned to an oxygen donor level. Stimulated laser activity has also been reported at this energy. We present a study of this band in GaN grown by high temperature vapor phase epitaxy (HTVPE). The high quality of this material, with an excitonic line width as narrow as 3 meV, allows us to distingish four different peak positions of this luminescence band. They appear at 3.4066, 3.4121, 3.4186, and 3.4238 eV (T = 6 K). Within the experimental error the lines exhibit an equidistant spacing of 6 meV. They show a pressure behavior similar to shallow levels described by effective mass theory. We discuss our results in the context of incorporation of oxygen and structural defects in GaN.

show abstract

“…In Ref. [8] injection of H 2 O during growth lead to higher [19], whereas as shown above the residual donor level is much shallower than the L1 -L4 levels.…”

Section: Discussionmentioning

confidence: 76%

Fine Structure of the 3.42 eV Emission Band in GaN

et al. 1995

View full text Add to dashboard Cite

show abstract

“…12 Oxygen had been proposed as a potential source of n-type conductivity in GaN as early as 1983. 24 Still, the prevailing conventional wisdom, attributing the n-type behavior to nitrogen vacancies, proved hard to overcome. Recent experiments have confirmed that unintentionally doped n-type GaN samples contain silicon or oxygen concentrations high enough to explain the electron concentrations.…”

Section: Unintentional Doping -Oxygenmentioning

confidence: 99%

Doping of AlGaN Alloys

Walle

Stampfl

Neugebauer

et al. 1999

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

Nitride-based device structures for electronic and optoelectronic applications usually incorporate layers of Al x Ga 1-x N, and n-and p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in Al x Ga 1-x N are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles densityfunctional-pseudopotential calculations. For n-type doping we will discuss doping with oxygen, the most common unintentional donor, and with silicon. For oxygen, a DX transition occurs which converts the shallow donor into a negatively charged deep level. We present experimental evidence that oxygen is a DX center in Al x Ga 1-x N for x>~0.3. For p-type doping, we find that compensation by nitrogen vacancies becomes increasingly important as the Al content is increased. We also find that the ionization energy of the Mg acceptor increases with alloy composition x. To address the limitations on p-type doping we have performed a comprehensive investigation of alternative acceptor impurities; none of the candidates exhibits characteristics that surpass those of Mg in all respects.

show abstract

“…As early as 1983, oxygen had been proposed as a potential source of n-type conductivity in GaN [14]. In 1992, Chung and Gershenzon observed the effect of oxygen on the electrical and optical properties of GaN grown by MOCVD [15].…”

Section: Nitrogen Vacancies Versus Unintentional Impuritiesmentioning

confidence: 99%

Defects and Defect Reactions in Semiconductor Nitrides

et al. 1999

View full text Add to dashboard Cite

We report a comprehensive investigation of native point defects and impurities in GaN, MN, and AlGaN alloys, with the goal of understanding doping limitations in nitride semiconductors. Unintentional incorporation of impurities (mainly oxygen) explains the tendency of nitride semiconductors to exhibit n-type conductivity. Silicon is the n-type dopant of choice; it remains shallow in AlGaN up to high Al content, while oxygen undergoes a DX transition. Experimental evidence for DX centers will be discussed. In p-type material, Mg doping is hindered by an increase in ionization energy with increasing Al content in AlGaN, and by nitrogen vacancies acting as compensating centers. Complex formation between magnesium and oxygen and between magnesium and nitrogen vacancies will be discussed.

show abstract

On the origin of free carriers in high‐conducting n‐GaN

Cited by 141 publications

References 16 publications

Fine Structure of the 3.42 eV Emission Band in GaN

Fine Structure of the 3.42 eV Emission Band in GaN

Doping of AlGaN Alloys

Defects and Defect Reactions in Semiconductor Nitrides

Contact Info

Product

Resources

About