On the origin of low frequency noise in GaAs metal–semiconductor field-effect transistors

Abstract

The origin of low frequency (LF) noise of GaAs metal–semiconductor field-effect transistors (MESFETs) was examined. A few generation-recombination components dominate the flicker noise present in the measured spectral noise intensity. It follows that the noise scales proportionally to L−3 (L stands for channel length). The earlier is obeyed perfectly when the noise originated in the channel access areas is negligible compared to the LF noise of the region underneath the gate. Next, it was observed that the corner frequency of the Lorentzian noise components depends on the gate-to-source bias and does not depend on the device geometry. The third important observation is that the LF noise power does not depend on the source-to-gate bias at frequencies higher than 100 Hz. It was shown that both fluctuations of the mobility and fluctuations in the carrier density inside the channel could not explain the observed noise. We claim that charge fluctuations in the Shockley–Read–Hall centers found inside the depleted layer below the gate electrode are likely to be the origin of low frequency noise in GaAs MESFETs.

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

“…Depending on the device structure, different noise mechanisms are responsible for the main contribution to the overall noise. [3][4][5] Since the observed low frequency noise was a superposition of the 1/f and generationrecombination noise, we should analyze the possible location of the noise sources on the basis of both 1/f and g -r noise models.…”

Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors

“…However, nonzero current in the channel ͑I D ͒ induced significant increase of 1 / f noise, which resulted in lower SNR. 11 1 / f noise from the Gate current ͑I G ͒ was negligible since I G is orders of magnitude smaller than I D . Therefore the best performance ͑SNR= 55.5, system current responsivity R = 80 A / W, NEP= 5 ϫ 10 −8 W / Hz 1/2 ͒ was achieved with a purely photovoltaic signal at a resonant V G , which is not necessarily zero ͑see Fig.…”

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

“…Gallium nitride (GaN)-based semiconductors are used in blue-light-emitting diodes, [1][2][3] blue laser diodes, [4][5][6][7] and high-electron-mobility transistors. 8,9) Recently, studies have also evaluated their application in solar cells, 10,11) highpower transistors, 12,13) and radiation detectors. 14,15) GaN crystal has a wurtzite crystal structure with two polarities along the c-axis direction, namely, Ga-polar GaN and N-polar GaN.…”