On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs

Guacci, Mattia; Heller, Morris; Neumayr, Dominik; Bortis, Dominik; Kolar, Johann W.; Deboy, G.; Ostermaier, Clemens; Häberlen, Oliver D.

doi:10.1109/jestpe.2018.2885442

Cited by 76 publications

(43 citation statements)

References 20 publications

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“…The significant energy dissipation observed in the charging and discharging process of the output capacitance of some Si superjunction (SJ) MOSFETs initiated studies on their large-signal COSS [8], [9]. The lower-thanexpected efficiency in soft-switched GaN-based power converters, again highlight the need for precise measurements of COSS losses [1], [2].…”

Section: Introductionmentioning

confidence: 99%

“…Another restriction caused by any steady-state measurement is the limitation of voltage-swing/frequency applied to the DUT before thermal runaway [1]. In addition, the need for highamplitude sinusoidal voltage source in the ST method constrains the maximum voltage and frequency that can be applied to characterize large-signal COSS, and the typical values of dv/dt in switching transients, especially for GaN transistors, can only be achieved at very high frequencies, in the range of tens of megahertz [2].…”

Section: Introductionmentioning

confidence: 99%

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Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Nikoo

Jafari

Perera

et al. 2020

IEEE Trans. Power Electron.

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In this letter, we present a new measurement technique to evaluate the large-signal output capacitance (COSS) of transistors as well as the COSS energy dissipation (EDISS), based on the nonlinear resonance between a known inductor and the output capacitance of the device under test. The method is simple and robust, and only requires a single voltage measurement to extract the large-signal COSS both in charging and discharging transients. By changing the circuit parameters, it is possible to tune the resonance frequency (even above 40 MHz) and the voltage swing (even above 1 kV) with dv/dt exceeding 100 V/ns, even though the method relies only on a low-voltage DC source, without the need for high-voltage RF amplifiers. The single-pulse operation of the method enables measuring COSS and EDISS at very high frequency and dv/dt values without any thermal runaway. Using the proposed method, we extracted large-signal COSS and EDISS of power transistors based on different semiconductor technologies. The obtained results were verified by Sawyer-Tower method and data reported in the literature. The precise characterization of large-signal COSS of transistors presented in this letter is essential for the design of power converters, especially those operating at high switching frequencies.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Nikoo

Jafari

Perera

et al. 2020

IEEE Trans. Power Electron.

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“…Resonant gating techniques can reduce the driving losses [31]- [33]. Under certain voltage and frequency conditions, the resonant charging/discharging process of the switching device's junction capacitor C oss could generate significant power losses [34]- [36].…”

Section: Comparison Of Zvs Resonant Invertersmentioning

confidence: 99%

“…For the push-pull circuit, the total input power is 2P dc . Assuming ideally a 100% dc-ac efficiency, P dc is 160 W. With (36), we can calculate the required load resistance per phase R L = 0.74 × 50 2 160 Ω = 11.6 Ω.…”

Section: Comparison Of Zvs Resonant Invertersmentioning

confidence: 99%

Push–Pull Class $\Phi _{\text{2}}$ RF Power Amplifier

Zulauf

Zhang

et al. 2020

IEEE Trans. Power Electron.

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The Class Φ 2 /EF 2 amplifier is an attractive topology for high-voltage and high-frequency power conversion because of the high efficiency, reduced device voltage stress, simplicity of gate driving, and load-independent ZVS operation. Due to many degrees of freedom for tuning, previous studies can only solve the single-ended Φ 2 circuit using numerical methods. This work focuses on improving the design and operating characteristics of a push-pull Φ 2 amplifier with a T network connected between the switch nodes, or a PPT Φ 2 amplifier. The PPT Φ 2 amplifier has less circulating energy and achieves higher cutoff frequency f T than other Φ 2 /EF 2 circuits. We, then, present a series-stacked input configuration to reduce the switch voltage stress and improve the efficiency and power density. A compact 6.78-MHz, 100-V, 300-W prototype converter is demonstrated that uses low-cost Si devices and achieves 96% peak total efficiency and maintains above 94.5% drain efficiency across a wide range of voltage and power. Together with the advances in wide-bandgap semiconductors and magnetic materials, the PPT Φ 2 circuit opens more possibilities for the state-of-the-art performance of solid-state RF amplifiers in high-frequency, high-power applications, including wireless charging for electric vehicles, plasma RF drives, and nuclear magnetic resonance spectroscopy.

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“…Therefore, it is required to provide detailed measurements and analysis experimentally or by simulation in order to estimate expected behavior for operational conditions of the system. Several approaches, where comparisons on conventional and GaN technology is provided, can be found, while it is being clearly shown, how perspective technology enables to improve specific operational and qualitative indicators of power semiconductor component in [2]- [5].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

Frivaldský

Morgos

Zelnik

2020

ELEKTRON ELEKTROTECH

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The paper deals with the experimental analysis of the switching performance of selected GaN (Galium Nitride) power transistor, whose use is then expected in bidirectional buck/boost DC-DC converter. The switching performance was evaluated through highly accurate and verified simulation models of GS61008P transistor from GaN systems. Experiments have been provided for a wide spectrum of switching frequency and load current in order to verify transistor performance. Then, based on the results, it was expected that high-frequency operation (above 500 kHz) should not distort the efficiency performance of the designed bidirectional converter. This was confirmed after laboratory measurements of the efficiency of the proposed DC-DC converter, while operation under very high switching frequency was more effective compared to low-frequency operation. Over 95 % of efficiency was achieved for both buck and boost mode (125 W), even switching frequency was above 500 kHz.

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On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs

Cited by 76 publications

References 20 publications

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Push–Pull Class $\Phi _{\text{2}}$ RF Power Amplifier

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

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On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs

Cited by 76 publications

References 20 publications

Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance

Push–Pull Class $\Phi _{\text{2}}$ RF Power Amplifier

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

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Product

Resources

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Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance

Measurement of Large-Signal C _OSS and C _OSS Losses of Transistors Based on Nonlinear Resonance