2022
DOI: 10.1063/5.0079760
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On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Abstract: Non-linear output characteristics and the related turn-on voltages of GaN-based current aperture vertical electron transistors (CAVETs) are investigated experimentally. The resistive components are systematically analyzed in dependence of the device layout to determine the dominant resistances in the devices. Current–voltage (IV) and capacitance–voltage-characteristics (CV) are compared to a proposed planar-doped barrier diode (PDBD) model, and the influence of the bound sheet charge density and drift layer ca… Show more

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Cited by 5 publications
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