2012
DOI: 10.1063/1.3694054
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On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

Abstract: Cataloged from PDF version of article.A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confi… Show more

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Cited by 36 publications
(38 citation statements)
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“…To investigate the proposed step-doped barriers, InGaN/GaN LED epitaxial wafers were grown by AIXTRON close-coupled showerhead metal-organic chemical-vapor deposition (MOCVD) reactor on c-plane sapphire substrates [37]. The growth was initiated on a 30 nm thick low-temperature grown u-GaN buffer layer (at 560 C with a growth pressure of 600 mbar and a V/III ratio between NH and TMGa of 950).…”
Section: Methodsmentioning
confidence: 99%
“…To investigate the proposed step-doped barriers, InGaN/GaN LED epitaxial wafers were grown by AIXTRON close-coupled showerhead metal-organic chemical-vapor deposition (MOCVD) reactor on c-plane sapphire substrates [37]. The growth was initiated on a 30 nm thick low-temperature grown u-GaN buffer layer (at 560 C with a growth pressure of 600 mbar and a V/III ratio between NH and TMGa of 950).…”
Section: Methodsmentioning
confidence: 99%
“…The studied GaN LEDs grown by our MOCVD system consist of a buffer layer, a Si-doped GaN layer and InGaN-GaN multiple quantum wells (MQWs), followed by Mg-doped GaN [13,14]. The active region contains 5-pair quantum well stack (In 0.18 Ga 0.82 N/GaN with 3 nm thick wells and 12 nm thick barriers).…”
Section: Methodsmentioning
confidence: 99%
“…LED mesa of 350 µm × 350 µm was patterned through reactive ion etching. Ni/Au (5 nm/5 nm) was deposited as the semi-transparent current spreading layer on the defined mesa and then the thermal annealing was performed in the mixture of N 2 and O 2 for 5 min at a temperature of 525 C. Finally, Ti/Au (30 nm/150 nm) was deposited on the exposed n-GaN layer and the semi-transparent current spreading layer as the N and P electrodes [17][18][19][20]. The electroluminescence (EL) spectra and the optical output power for both the devices were collected through an integrating sphere attached to an Ocean Optics spectrometer (QE65000).…”
Section: Methodsmentioning
confidence: 99%