On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

Abstract

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

Electromagnetic pulse effects and damage mechanism on the semiconductor electronics

“…The FDC is typically observed when the power radiated from the HF source is directly coupled into the electronic systems [6] (Fig. 3).…”

“…The parasitic structure is usually an equivalent of a thyristor (or Silicon Controlled Rectifier, SRC), a PNPN structure which acts as a PNP and an NPN transistor stacked next to each other (Fig. 7) [4], [6]. Fig.…”

“…In our earlier publications [6,11] we have discussed the increase of the recombination current induced under the strong electric field in the p-n-junction (Fig. 8).…”

The Induced Physical Effects on the Semiconductor Electronics under Electromagnetic Pulse

“…In our earlier publications [10] we have discussed the increase of the recombination current induced under the strong electric field in the p-n-junction. The effect of the increase of the recombination current has been observed in the heterojunction bipolar transistor, but it is necessary to note that this effect takes place only at low level of the EMP power.…”