“…Softening has been observed or predicted for the B3 phase for the modes and points TA(L), 52 LA(L) 52 and TA(X). 39,48 In our results, softening is predicted at 0 GPa in TA(L) and in both TA(L) and TA(X) at higher pressures. For LA(L), our values are clearly nonnegative in the range studied.…”
Section: Static and Thermal Eossupporting
confidence: 62%
“…Our α value for 3C–SiC–B3 at zero pressure and 300 K (8.15 × 10 −6 K −1 ) is close to the experimental value 27,38 and previous computations. 27,39 The value of α reduces with pressure at a progressively decreasing rate (in the absolute value) with estimated average derivative values of −2.14 × 10 −7 K −1 GPa −1 between 0 and 5 GPa and −0.97 × 10 −7 K −1 GPa −1 between 0 and 65 GPa. We notice that the accurately determined α value of Si at room T (7.71 × 10 −6 K −1 13 ) is already reached by 3C–SiC–B3 at around 2 GPa according to our calculations.…”
Section: Resultsmentioning
confidence: 99%
“…For the B3 phase, our results for TO(G) and LO(G) are in agreement with previous calculations and experimental results. 37,39,[46][47][48][49][50][51][52][53] The only experimental results available outside the G point are from Wang et al, 52 which were obtained using the data of Olego et al 46,47 but assuming the own Wang et al theoretically calculated bulk modulus. The overall agreement we found with respect to the experimental results (except for LA(L)) provides support to our data outside those ranges that are not available in other calculations and experiments.…”
A better understanding of the effects of thermal and pressure on the wide gap SiC semiconductor is necessary for both (i) an improvement of the performance of this compound in...
“…Softening has been observed or predicted for the B3 phase for the modes and points TA(L), 52 LA(L) 52 and TA(X). 39,48 In our results, softening is predicted at 0 GPa in TA(L) and in both TA(L) and TA(X) at higher pressures. For LA(L), our values are clearly nonnegative in the range studied.…”
Section: Static and Thermal Eossupporting
confidence: 62%
“…Our α value for 3C–SiC–B3 at zero pressure and 300 K (8.15 × 10 −6 K −1 ) is close to the experimental value 27,38 and previous computations. 27,39 The value of α reduces with pressure at a progressively decreasing rate (in the absolute value) with estimated average derivative values of −2.14 × 10 −7 K −1 GPa −1 between 0 and 5 GPa and −0.97 × 10 −7 K −1 GPa −1 between 0 and 65 GPa. We notice that the accurately determined α value of Si at room T (7.71 × 10 −6 K −1 13 ) is already reached by 3C–SiC–B3 at around 2 GPa according to our calculations.…”
Section: Resultsmentioning
confidence: 99%
“…For the B3 phase, our results for TO(G) and LO(G) are in agreement with previous calculations and experimental results. 37,39,[46][47][48][49][50][51][52][53] The only experimental results available outside the G point are from Wang et al, 52 which were obtained using the data of Olego et al 46,47 but assuming the own Wang et al theoretically calculated bulk modulus. The overall agreement we found with respect to the experimental results (except for LA(L)) provides support to our data outside those ranges that are not available in other calculations and experiments.…”
A better understanding of the effects of thermal and pressure on the wide gap SiC semiconductor is necessary for both (i) an improvement of the performance of this compound in...
“…57 That is, in addition to acoustic phonons, even optical phonons can contribute to heat transfer across the SiC-SiC nanogap. [58][59][60][61] For the nonidentical cases of C-Si and Si-C, the VDOSs of the atomic terminated layer in the heating wall are mismatched with those in the cooling wall, as shown in Fig. 5(a) and (b).…”
mentioning
confidence: 98%
“…57 That is, in addition to acoustic phonons, even optical phonons can contribute to heat transfer across the SiC–SiC nanogap. 58–61…”
Quasi-Casimir coupling can induce phonon heat transfer across a sub-nanometer vacuum gap between monoatomic solid walls without electromagnetic fields. However, it remains unclear how the atomic surface terminations in diatomic...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.