On the Production of X‐rays by Low Energy Ion Beams

Joy, David C.; Meyer, Harry M.; Bolorizadeh, Mohammad Agha; Lin, Yi-Hsien; Newbury, Dale E.

doi:10.1002/sca.20002

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…11 However the number and energy of the backscattered ions do indicate the Figs. 1(a and b)), however this image is formed by transmistted electrons.…”

Section: Helium Ion Microscopymentioning

confidence: 96%

An Investigation of Nickel Cobalt Oxide Nanorings Using Transmission Electron, Scanning Electron and Helium Ion Microscopy

Behan¹,

Zhou²,

Boese³

et al. 2012

j nanosci nanotechnol

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Nickel cobalt oxide alloy nanorings have been synthesized using a wet chemistry method. Standard characterization techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used to characterize the nanorings. We, however, also examined the nanostructures in the helium ion microscope (HIM) and employed backscattered ion spectroscopy to determine thickness and composition of the nanostructure. The HIM provides complementary information of the nanostructures and the viability of using it as a tool for magnetic nanoparticle characterization was demonstrated by comparing the results from all three microscopes.

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“…11 However the number and energy of the backscattered ions do indicate the Figs. 1(a and b)), however this image is formed by transmistted electrons.…”

Section: Helium Ion Microscopymentioning

confidence: 96%

An Investigation of Nickel Cobalt Oxide Nanorings Using Transmission Electron, Scanning Electron and Helium Ion Microscopy

Behan¹,

Zhou²,

Boese³

et al. 2012

j nanosci nanotechnol

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“…When the incident particle is an electron, then these two energies are numerically identical when their velocities are the same, but when the incoming particle is a helium ion—which is about 7,800× heavier than an electron—then the kinetic energy of the ion must be 7,800× higher than that of the electron—i.e., about 70 MeV for Cu Kα—to achieve the velocity match that makes ionization possible. The correctness of this model is demonstrated theoretically by the fact that plots of the computed ionization cross sections for helium ions and electrons in a given material are closely similar in magnitude and form when plotted as a function of the respective particle velocities (Joy et al, 2007), and in practice by the extensive literature on PIXIE (proton induced X-ray ionization excitation) and related techniques (Johansson & Johansson, 1976). Some alternative procedure is therefore necessary if microanalytical capability is to be possible on the HIM whose maximum beam energy is limited to 50 keV or less.…”

Section: X-ray Microanalysismentioning

confidence: 97%

Is Microanalysis Possible in the Helium Ion Microscope?

Joy

Griffin

2011

Microsc Microanal

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Because the ability to perform some form of chemical microanalysis has become an essential feature for any microscope, it is necessary to investigate what options are available in the new "ORION" helium ion microscope (HIM). The HIM has the ability to visualize local variations in specimen chemistry in both the ion induced secondary electron and the Rutherford backscattered imaging modes, but this provides only limited and qualitative information. Quantitative, elementally specific, microanalysis could be performed in the HIM using secondary electron spectroscopy, Rutherford backscattered ion spectroscopy, or secondary ion mass spectroscopy, but while each of these options has promise, none of them can presently guarantee either reliable element identification or quantitative analysis across the periodic table.

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“…In order to simulate the stochastic exposure distribution in the resist, one may employ the Monte Carlo simulation. [13][14][15][16] A possible method, to be referred to as direct Monte Carlo method (DMC), is to generate a separate (instance of) point spread function (PSF), for each exposed point in a circuit pattern, which describes the exposure distribution in the resist when a point is exposed. While the exposure distribution derived (through convolution) by this method can be realistic, it is not practical since the number of points (or PSF's to be generated) is tremendous and generating a PSF requires a long computation time.…”

Section: Introductionmentioning

confidence: 99%

Fast simulation of stochastic exposure distribution in electron-beam lithography

Zhao

Lee

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The relative critical dimension variation of nanoscale features has become large enough to significantly affect the minimum feature size and maximum circuit density realizable in most lithographic processes. One source of such variation is the line edge roughness (LER). In the electron-beam lithographic process, the fluctuation of exposure (energy deposited) in the resist is one of the main factors contributing to the LER. It is essential to accurately estimate the exposure fluctuation for developing an effective method to reduce the LER. A possible method is to rely on the Monte Carlo simulation in computing the exposure distribution in a circuit pattern, i.e., generating a point spread function (PSF) for each point to be exposed, where the PSF is stochastic. While this approach can lead to a more realistic estimation, it is not practical due to its tremendous amount of computation required. In this paper, a new method to greatly reduce the number of PSF's to be generated without sacrificing the accuracy of estimating the exposure fluctuation is described. It generates only a small number of stochastic PSF's and uses them randomly in the exposure calculation for a circuit pattern. Through an extensive simulation, it is shown that the new method is statistically equivalent to generating a PSF for each point with an acceptable error. Since it is not necessary to know the exact spatial distribution of exposure for estimation of the LER, the new method has a good potential to be employed in practice to reduce the computation time by orders of magnitude.

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On the Production of X‐rays by Low Energy Ion Beams

Cited by 9 publications

References 12 publications

An Investigation of Nickel Cobalt Oxide Nanorings Using Transmission Electron, Scanning Electron and Helium Ion Microscopy

An Investigation of Nickel Cobalt Oxide Nanorings Using Transmission Electron, Scanning Electron and Helium Ion Microscopy

Is Microanalysis Possible in the Helium Ion Microscope?

Fast simulation of stochastic exposure distribution in electron-beam lithography

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