On the Recovery Time of Highly Robust Low-Noise Amplifiers

Liero, A.; Dewitz, Mike; Kühn, Silvio; Chaturvedi, Nidhi; Xu, Jijun; Rudolph, Matthias

doi:10.1109/tmtt.2010.2041519

Cited by 31 publications

(22 citation statements)

References 8 publications

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“…The LNA employed a 2 x 100 μm device in the first stage to decrease the power consumption and also get the low noise characteristics and a 10 x 70 μm device in the second stage to increase the linearity and the output power. The short stub lines at the source of the transistors (Q 1 and Q 2 ) improve noise, power matching and stability [1], [6]. The MIM capacitors show about ±10 % variations of their properties because of their dielectric constants and film thickness variations from a run-by-run fabrication.…”

Section: Designmentioning

confidence: 99%

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Chang

Park

Mun

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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A compact 10 ~ 13 GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using simple matching and bias circuits is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. In order to reduce the chip size and simplify the structure of the LNA, the matching and bias circuits were combined functionally and structurally together and the meandered microstriplines were used. And the combined circuits also contributed to decrease the noise figure of the LNA. Therefore, the measured noise figures of the LNA are almost equal to the minimum noise figure of 2 x 100 μm device which was used for the first stage of the LNA. And also the chip size of the fabricated LNA is 1.7 x 0.8 mm 2 including two groundsignal-ground (GSG) pads and the DC pads on the chip. The LNA shows a noise figure of 1.7 ~ 2.1 dB with a gain of 19 ~ 26 dB across the 10 ~ 13 GHz frequency range. In continuous wave (CW) conditions, it presents a saturated output power of 29 ~ 34 dBm for 10 ~ 13 GHz and also the output third-order intercept point (OIP3) of 42 dBm at 11.4 GHz.

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Section: Designmentioning

confidence: 99%

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Chang

Park

Mun

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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show abstract

“…In addition, the merged circuits also contribute to decreasing the noise figure of the LNA and increasing the gain as the parasitic resistances of the merged circuits are less than those of the separate matching and bias circuits for each. The previously reported LNAs used resistors in the gate bias circuits or feedback resistors to achieve stability . However, the resistors increase the noise figure.…”

Section: X‐band Gan Hemt Mmic Lna Designmentioning

confidence: 99%

“…In addition, having a highly linear LNA reduces the requirements for the band‐select filter, and thereby enables reconfigurable receiver designs. GaN HEMT LNAs do not require an RF limiter/protection circuitry to protect unwanted high‐RF power as they are robust enough to safely stand against highly received signals . However, GaN HEMTs have slightly more minimum noise figures than those of GaAs HEMTs.…”

Section: Introductionmentioning

confidence: 99%

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

Chang

Jeon

Park

et al. 2013

Micro & Optical Tech Letters

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In this article, we demonstrate a 9.7–12.9‐GHz monolithic microwave integrated circuit low‐noise amplifier (LNA) designed and fabricated using a AlGaN/GaN 0.25‐µm high‐electron mobility transistor on silicon carbide (SiC) technology. Microstriplines are used for matching circuits, except for the MIM capacitors acting as DC blocks in the matching circuits of the LNA circuit. The matching and bias circuits of the LNA are merged and meandered to simplify the structure of the amplifier and reduce the chip size. The LNA shows a noise figure of 1.7–2.1 dB with a small‐signal gain of 20–26 dB and an isolation of 45–52 dB across the 9.7–12.9 GHz frequency range. Under continuous wave conditions, a saturated output power of 34 dBm is shown at 11.2 GHz, and an output third‐order intercept point of 42 dBm is also achieved at 11.4 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:96–99, 2014

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“…The properties of GaN technology make it feasible to develop wideband, high survivability, high gain, high linearity, and low noise amplifiers. Therefore, many low noise amplifiers (LNAs) at different frequencies are developed using GaN HEMT technology in recent years 6‐15 . Moreover, multiple studies have shown that GaN based LNAs have more than 20 dB higher survivability than GaAs LNAs with a high breakdown field 6‐8 …”

Section: Introductionmentioning

confidence: 99%

“…Therefore, many low noise amplifiers (LNAs) at different frequencies are developed using GaN HEMT technology in recent years 6‐15 . Moreover, multiple studies have shown that GaN based LNAs have more than 20 dB higher survivability than GaAs LNAs with a high breakdown field 6‐8 …”

Section: Introductionmentioning

confidence: 99%

From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

Osmanoglu

Özbay

2021

Int J Numerical Modelling

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This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12‐lead 3 × 3 mm2 air cavity QFN over‐molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.

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On the Recovery Time of Highly Robust Low-Noise Amplifiers

Cited by 31 publications

References 8 publications

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

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On the Recovery Time of Highly Robust Low-Noise Amplifiers

Cited by 31 publications

References 8 publications

Compact 10 &#x223C; 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 &#x223C; 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

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Product

Resources

About

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits