On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

Govoreanu, B.; Houdt, J. Van

doi:10.1109/led.2007.914089

Cited by 31 publications

(11 citation statements)

References 4 publications

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“…Moreover, the retention characteristics of the device were still good even at 80% humidity, and the retention time was extrapolated to more than ten years. [38][39][40][41][42][43][44][45][46] These results are a clear indication that our device has high electrical stability. These results are a clear indication that the device has high electrical stability.…”

Section: Resultsmentioning

confidence: 82%

Highly Self‐Healable Write‐Once‐Read‐Many‐Times Devices Based on Polyvinylalcohol‐Imidazole Modified Graphene Nanocomposites

Kim

et al. 2021

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electrical properties, mass productivity, scalability, and high flexibility. [7][8][9][10][11][12][13][14][15][16][17][18][19] Table 1 lists and compares the basic performances of our device with those of typical devices explored in the past decade. According to the current research results, OBDs with reset voltages less than 3 V can be erased freely, so they are often referred to flash memories; on the other hand, those with reset voltage higher than 3 V are regarded as excellent candidates for ROMs because the recorded information cannot be easily erased. To distinguish them, we call OBDs that are expected to be used as ROMs write-once-read-many-times (WORM) devices. [9,11,14] In addition, compared with a three-terminal structure, a two-terminal structure allows vertical integration to be achieved more easily, which is expected to improve the memory capacity greatly. Such a prospect also makes two-terminal OBDs more and more worthy of in-depth study.Research results for three-terminal OBDs that can be selfhealed in a fracture state have been published. [20] However, the research on two-terminal self-healable OBDs is limited, to the best of our knowledge, to the healing of micro-cracks on their surfaces caused by repeated bending. Moreover, for use in wearable electronics, two-terminal OBDs must be able to resist or recover from damage caused by external impacts, but no results in this area, to the best of our knowledge, have been reported. In addition, the two-terminal self-healable OBDs have two key issues that are very worthy of attention. The first is the active layer, which determines the electrical properties of devices and can be healed spontaneously after damage. The second is whether the electrical properties of the devices remain unchanged after self-healing. [17,20] The recovery of the electrical properties of devices often depends on the intact repair of the active layer. [3] Therefore, if wearable electronic systems are to be repeatedly used for a long time, the materials in the active layers of two-terminal OBDs must have the capability to selfheal. To sum up, the research and development of two-terminal self-healable OBDs are of great significance if the practicability of wearable electronic systems is to be improved.In this paper, we present a two-terminal self-healable nanocomposite-based WORM device with excellent storage capability, flexibility, and electrical stability. Imidazole-modified graphene quantum dots (IMGQDs) were applied as fillers in a polyvinyl alcohol (PVA) polymer matrix. To demonstrate the device's stability for applications in wearable electronics, we Repetitious mechanical stress or external mechanical impact can damage wearable electronic devices, leading to serious degradations in their electrical performances, which limits their applications. Because self-healing would be an excellent solution to the above-mentioned issue, this paper presents a selfhealable memory device based on a novel nanocomposite layer consisting of a polyvinyl alcohol matrix and imidazole-modified g...

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Section: Resultsmentioning

confidence: 82%

Highly Self‐Healable Write‐Once‐Read‐Many‐Times Devices Based on Polyvinylalcohol‐Imidazole Modified Graphene Nanocomposites

Kim

et al. 2021

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“…17). This particular behavior of the HfAlO has been found to be due to different levels of traps [18], of which the shallow one(s) determine the hightemperature behavior. These trap levels are also giving some V T instability if ECS Transactions, 19 (2) 649-668 (2009) programming is not carried out in the saturation-free regime, where no charge is injected/trapped in the IPD.…”

Section: Ecs Transactions 19 (2) 649-668 (2009)mentioning

confidence: 99%

“…The traps are distributed within a band of 1.7-2.2 eV. Compared to the Al 2 O 3 conduction band edge these are rather deep, which leads to a low temperature activation [18]. Further improvement in retention is achievable by reducing the trap density and/or increasing the physical thickness of the high-k layer.…”

Section: Al 2 O 3 -Based Ipd'smentioning

confidence: 99%

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Govoreanu

Kittl

Vos³

et al. 2009

ECS Trans.

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The quest for mass storage and the diversity of end-user applications led to an aggressive scaling of the NAND Flash memory. A key factor to its success is the high density integration potential, which allows fabrication of large memory arrays. Reduction of the feature size below 40 nm may, however, require modifications of the conventional floating gate cell architecture, due to lack of physical space between neighboring cells, which no longer allows wrapping of the control gate over the floating gate. This has consequences on both intra- as well as inter-cell levels, calling for the introduction of high-k dielectrics in Flash memory. In this paper, we take a top-down stance and translate device characteristics into material requirements and/or points of attention that need to be addressed in order to ensure a successful continued scaling of the Flash memory for the upcoming technology generations.

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“…1(a) for FG cells and Fig. 1(b) for CT memory cells [5][6][7][8][9][10][11]. This characteristics give rise to the problem that the expected lifetime varies according to the choice of the activation energy depending on the stress temperatures.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

Park

Choi

Jun

et al. 2015

Solid-State Electronics

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On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

Cited by 31 publications

References 4 publications

Highly Self‐Healable Write‐Once‐Read‐Many‐Times Devices Based on Polyvinylalcohol‐Imidazole Modified Graphene Nanocomposites

Highly Self‐Healable Write‐Once‐Read‐Many‐Times Devices Based on Polyvinylalcohol‐Imidazole Modified Graphene Nanocomposites

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

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