On the semi-insulating polycrystalline silicon resistor

Lee, Ming-Kwang; Lu, Chih‐Yuan; Chang, Ko-Min; Shih, Ching‐Long

doi:10.1016/0038-1101(84)90073-x

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…Based on these figures, it is seen that, all the measured I-V curves have a hyperbolicsine-like characteristic. 6,18) The plasma treatment caused a marked decrease in the current of the poly-Si films. The undoped poly-Si films were seen as having a current level approximately one order lower than that in the compensation-doped cases.…”

Section: Resultsmentioning

confidence: 99%

“…The same situation has been described by Lee et al 6) as ''B-P pair'' compensation. The chemical bond formations of both direct and indirect (long range) boron-phosphorus bonds are as illustrated as 6) ... where B(Si) and P(Si) denote the as-implanted boron and phosphorus incorporated in poly-Si film. Á in eqs.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, the mixed incorporation of both n-and p-type dopants, referred to as n-p compensation doping, has been used in an advanced IC fabrication process. 6) A semiinsulation film employing n-p compensation doping has a lower temperature coefficient and promises a higher resistivity. Hoshi et al, 7) showed that hydrogen plasma could effectively improve a performance of the polysilicon film, in particular, control the resistivity.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films

Liou

Chang

Wang

2005

Jpn. J. Appl. Phys.

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In this study, we investigate hydrogen and oxygen plasma effects on undoped and n-p compensation-doped polycrystalline silicon (poly-Si) resistors. The current-voltage (I-V) characteristics, channel resistance (R p ), contact region resistance (R j ), total resistance (R T ¼ R p þ R j ), and activation energy of the poly-Si resistors with different film lengths and passivation layers were measured and analyzed. It is found that the film resistance has been strongly enhanced by either hydrogen or oxygen plasma treatments, which is attributed to the neutralization effect of plasma treatment inside the grain being overridden by the passivation effect at the grain boundary. Moreover, it is seen that both the total resistance and activation energy of undoped intrinsic films are larger than those of n-p compensation-doped films. To realize a high-value poly-Si resistor, a novel multilayer structure is proposed for the first time. Compared with the conventional single-layer structure, it is seen that the relatively smaller grain size in a four-layer structure results in an approximately 25-50% increase in resistance.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%