On the structure and conduction mechanism of thick resistive films

Kusy, Andrzej

doi:10.1016/0040-6090(76)90599-x

Cited by 39 publications

(13 citation statements)

References 23 publications

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“…Resistivity decreases sharply at a critical concentration known as the percolation threshold. The average resistivity of the SiO 2 -5 vol%RuO 2 The XRD pattern of the SiO 2 -20 vol%RuO 2 film fired at 450°C for 20 min in air is displayed in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore RuO 2 thick film resistors have been widely used in devices and hybrid circuits because the resistivity is controllable over 10 orders of magnitude, mainly by adjusting the concentration of RuO 2 particles. 1,2 The resistivity of the composite materials is related to the formation of a network of filler particles within the matrix. It decreases sharply at a characteristic conducting-particle concentration, known as the percolation threshold.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of sol–gel derived glass composite thin films

Shimamura

Hübert

Thust

2004

Surface & Interface Analysis

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A comprehensive analysis of composition and structure is essential for the development of new materials with tailored properties. We will demonstrate the application of SEM, XPS and XRD for the development of thin films containing nano-scaled electrical conductive particles for application in hybrid resistors.The films were prepared using the sol-gel process and precursor solutions were synthesized from an acid hydrolysis of a mixture of TEOS, water and ethanol. Alcoholic solutions of ruthenium chloride were then allocated to obtain up to 30 vol% filler in the films. The films were precipitated by dip-coating on silicon, silica or glass sheets and heat treated at up to 600• C in air or nitrogen atmospheres.A nano-structured morphology could be identified consisting of homogeneously dispersed crystalline RuO 2 particles of 10 to 180 nm in size, in an amorphous SiO 2 matrix. Film morphology can be varied using the synthesis process. The resistivity of the films was measured by an I-V measurement system. It changes drastically from 10 9 Z·cm to 10 −2 Z·cm according to the amount of dispersed conductive particles.The results show that composition-structure-property relations can be described by use of sophisticated analytical methods.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of sol–gel derived glass composite thin films

Shimamura

Hübert

Thust

2004

Surface & Interface Analysis

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“…Moreover, it is demonstrated that the resulting picture fits the framework of a recently proposed model 3 6 even though only unconvincing explanations were proposed up to now. Figure 2 shows how the experimental measurements satisfactorily fit the proposed equation in a wide temperature range.…”

Section: Introductionmentioning

confidence: 93%

“…Figure 5. Microvoids incorporated in the thick-film FIGURE 6 Ag concentration vs. resistor length obtained by EMPA.…”

Section: Introductionmentioning

confidence: 99%

Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors

1978

Microelectronics Reliability

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The electrical characteristics of ruthenium-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the resistor film.The majority of the data were collected by using silver-based terminations since Ag diffusion processes, and then the relevant electrical effects, are emphasized.Scanning electron microscopy, electron microprobe analysis and X-ray diffraction analysis have been used to analyze the diffusion processes and the thick-film microstructures. It is shown that the experimental data is simply explained by a conduction model which assumes percolative tunneling of electrons through conductive grains embedded in the glass matrix of the resistors. Using simple hypotheses the model theory gives a good quantitative fit of the experimental results.

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“…For decades, the contributions of each process to the microstructure development have been studied. [2][3][4][5][6][7][8][9] These studies developed the kinetic equations pertinent to the above listed processes and determined the dominant parameters for these important stages in microstructure development. Among these Sarma…”

Section: Introductionmentioning

confidence: 99%

Analytical Quantification and Effect of Microstructure Development in Thick Film Resistor Processing

Lee¹

2012

Journal of the Microelectronics and Packaging Society

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Microstructure developments of RuO 2 based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; 7500-10 5 Pa·s for the glass sintering, 2000-7500 Pa·s for the glass island formation, 700-2000 Pa·s for the glass spreading, and 50-700 Pa·s for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

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On the structure and conduction mechanism of thick resistive films

Cited by 39 publications

References 23 publications

Characterization of sol–gel derived glass composite thin films

Characterization of sol–gel derived glass composite thin films

Influence of the metal migration from screen-and-fired terminations on the electrical characteristics of thick-film resistors

Analytical Quantification and Effect of Microstructure Development in Thick Film Resistor Processing

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