2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) 2015
DOI: 10.1109/pvsc.2015.7355779
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On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: The role of grain boundaries and rear Schottky contact

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Cited by 5 publications
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“…The variations described above may be explained as follows: At first, low Rsh values are likely due to copper‐enriched grain boundaries—by analogy to CIGSe material, for which grain boundaries have been extensively studied 32–34 . Then, the addition of sodium enables excess copper out‐diffusion from grain boundaries toward the surface where depending on the stage of the process it forms either CIGS or Cu x S; In the latter case, it is subsequently etched by KCN.…”
Section: Resultsmentioning
confidence: 99%
“…The variations described above may be explained as follows: At first, low Rsh values are likely due to copper‐enriched grain boundaries—by analogy to CIGSe material, for which grain boundaries have been extensively studied 32–34 . Then, the addition of sodium enables excess copper out‐diffusion from grain boundaries toward the surface where depending on the stage of the process it forms either CIGS or Cu x S; In the latter case, it is subsequently etched by KCN.…”
Section: Resultsmentioning
confidence: 99%