On the Theory of Anisotropic Thermoelectric power in Semiconductros

Samoilovich, A. G.; Nitsovich, M. V.; Nitsovich, V. M.

doi:10.1002/pssb.19660160210

Cited by 16 publications

(4 citation statements)

References 6 publications

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“…The mechanism of thermo‐emf anisotropy occurrence

(Δ α = α_{| |} - α_{⊥})

, associated with the presence of several scattering mechanisms, does not represent the practical interest. In this case, the values of Δα cannot exceed 25 μV K −1 .…”

Section: Thermoelectric Figure Of Merit In the Transmutation‐doped Anmentioning

confidence: 96%

“…In general, all non‐cubic crystals are characterized by the anisotropy of the majority kinetic phenomena, whereas the anisotropy of thermo‐emf is a rare phenomenon and requires specific conditions for its occurrence , namely: the presence of several mechanisms of anisotropic scattering at one group of charge carriers with anisotropic effective mass; the presence of several types of charge carriers, at least one of which has anisotropy of the effective masses; phonon drag of carriers with anisotropic effective mass. …”

Section: Thermoelectric Figure Of Merit In the Transmutation‐doped Anmentioning

confidence: 99%

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Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Гайдар

Баранский

2015

Physica Status Solidi (a)

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Phone: þ380 445 255 959, Fax: þ380 445 258 342The fundamental differences between the transmutation-doped and ordinary (doped by phosphorus through the melt when grown) n-Si crystals were shown on the base of the analysis of the experimental data. It was established that in a transmutation-doped n-Si crystal the anisotropy parameter of thermoelectromotive force (thermo-emf) of electron-phonon drag (M ¼ a ph jj =a ph ? ) increases with rising of the annealing temperature due to the increase of the longitudinal phonon component of thermo-emf (a ph jj ) with simultaneous reducing of the transverse component (a ph ? ). The effect of negative tensoresistance in the transmutation-doped n-Si crystals was found. The ways to optimize the thermoelectric figure of merit in ordinary and transmutation-doped n-Si crystals, which can be useful for practical utilization, were proposed.

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“…The mechanism of thermo‐emf anisotropy occurrence

(Δ α = α_{| |} - α_{⊥})

, associated with the presence of several scattering mechanisms, does not represent the practical interest. In this case, the values of Δα cannot exceed 25 μV K −1 .…”

Section: Thermoelectric Figure Of Merit In the Transmutation‐doped Anmentioning

confidence: 96%

Section: Thermoelectric Figure Of Merit In the Transmutation‐doped Anmentioning

confidence: 99%

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Гайдар

Баранский

2015

Physica Status Solidi (a)

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“…In fresh samples, for µ = 1000 cm 2 /(V · s), the component µ n amounts to 1300 cm 2 /(V · s), which, according to [7], can be stipulated by the presence of dipoles with the concentration n n = 7.5 · 10 17 cm −3 .…”

Section: Experimental Datamentioning

confidence: 99%

Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum

Moryashin

Obolensky

Perov

et al. 2007

Radiophys Quantum Electron

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We study the current-voltage (I-V ) characteristics and 1/f (flicker) noise spectra of experimental samples (prototypes) of submicron GaAs field-effect transistors (FETs) with Schottky planar gate in the linear regime. The model of I-V characteristics, in which the FET channel is described by the Shockley model and the crowding of current lines in passive regions is taken into account, is proposed. Analysis of the measured set of I-V characteristics allowed us to define geometric and electric parameters of the devices more precisely. The natural ageing effects were revealed by analyzing the measurements performed at a 3-year interval. We make the conjecture that excess defects are present in the structure and they are probably represented by dipoles (donor-acceptor pairs). Concentration of excess defects is estimated and its significant decrease with time is detected. For analysis of 1/f noise, we used the hypothesis of the existence of bistable point defects, assuming that the latter result in resistivity fluctuations of the conducting regions. It is shown that defects in the channel give the main contribution to 1/f noise and their concentration decreases with time. Increased content of defects near the buffer layer was detected in some devices. The experimental data obtained allow us to suppose that the observed 1/f noise is caused by the excess defects revealed in the analysis of I-V characteristics of FETs with Schottky planar gate.

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“…I n this case the components of the thcrmal e.m.f. tensor can be represented as [18] where and I n the case of scattering of current carriers on acoustic phonons where p; and p: are reduced chemical potentials for holes and for electrons.…”

Section: Mechanisms Of Origination Of Thermal Emp Anisotropy In Semic...mentioning

confidence: 99%

Mechanisms Responsible for Anisotropy of Thermal E.M.F. in Semiconductors

Баранский

Buda

Savyak

1989

Phys. Stat. Sol. (a)

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Institute of Semiconductors, Acac7emy ofSciences o] the Ckrniniccn S S R , K i e ~l ) Mechanisms Responsible for Anisotropy of Thermal E.M.F. in Semiconductors BY P. I. BARANSKII, I. S. Uur)a, and I-. V. SAVYAK Contents 1. Inti*oductiotb 2 . Mechanisms of origination of thewnu1 e.m.f. anisotropy i n semiconductors Effect of uniaxial strain on thermoelectric pi*opei4tirs of wiany-valkFj seniicondu(*turs(piexothermal e.m.f. anisotropy) . Eddy thermoelectric currents in thei.naoelect,,ically anisotropic media and some issues of thermodynamics of anisoti*opir thermodements Most important characteristics of traditional thermoelectrically anisotropic rtiuteiSicils ( l'A M ) l'hevmoelectrical characteristics of naatcy-valley ( n -C e t y p e ) semiconductors tinder conditions of manifestation of one valle?j

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On the Theory of Anisotropic Thermoelectric power in Semiconductros

Cited by 16 publications

References 6 publications

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Optimization of the thermoelectric figure of merit in the transmutation‐doped and ordinary n‐Si crystals

Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum

Mechanisms Responsible for Anisotropy of Thermal E.M.F. in Semiconductors

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