1991
DOI: 10.1002/pssa.2211250205
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On the Transition of the Dynamical Case of X-Ray Diffraction to the Kinematical One in Perfect and Real Silicon Crystals Distorted by Ultrasound

Abstract: The amplitude dependences of the integral reflectivity (IR) Ri(W) of perfect silicon crystals distorted by shear short wave ultrasonic vibrations are investigated for high order reflections of AgKβ, AgKα1 radiations. Transition to the kinematical regime of diffraction is obtained for high ultrasound amplitudes both, in the Laue and in the Bragg case of diffraction. The ratios of the integral reflectivities measured in the initial and distorted state of a crystal are in agreement with the theory developed forme… Show more

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Cited by 8 publications
(10 citation statements)
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“…2, performed basing on the interpretations given in papers [8][9][10] indicates for the larger variation of the shape of the curve after irradiation with neon ions. The diffraction effects (flash-up of intensity) from the amorphous layers are pointed out by the arrows on the curves for the both implanted samples.…”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…2, performed basing on the interpretations given in papers [8][9][10] indicates for the larger variation of the shape of the curve after irradiation with neon ions. The diffraction effects (flash-up of intensity) from the amorphous layers are pointed out by the arrows on the curves for the both implanted samples.…”
Section: Resultsmentioning
confidence: 98%
“…The curves of spatial distribution of X-ray intensity were registered at the fixed Bragg position of the sample with narrow (≈ 50 pm) slits situated near the moving detector. This method permits to separate from the recorded intensity the contribution of diffuse scattered intensity IDs due to defects localized at various depths as well as elastic strains [8][9][10]. Hówever, the inhomogeneous distribution of defects along the normal to the surface does not allow to determine some average structural characteristics of the layers situated at the absorption depth t o = p -1 , where p is the photoelectric coefficient of absorption.…”
Section: Methodsmentioning
confidence: 99%
“…3), we studied the nonhomogeneous depth distribution of defects in the thick silicon plate from series I (t = 1837 μm) irradiated by hydrogen ions. The analysis of the character of spatial distribution of diffracted beam intensity allows us to define also the integral characteristics of stucture perfection of the crystal [9]. Unfortunately, it is impossible to do such an analysis, in the case when the crystal reveals simultaneously the both macro strains and local deformed regions and also in the case when the crystal is irradiated by protons.…”
Section: Experimental Data Analysismentioning
confidence: 99%
“…The method of spatial (not angular) distribution of a diffracted beam intensity was developed in [7][8][9] for reflection from the surface of a crystal. The necessary condition for observation of diffuse scattering by defects situated within the absorption depth μ-1 below the surface of a crystal is the requirement μ-1 > Λ which is strictly fulfilled for hard radiation.…”
Section: Analysis Of a Spatial Distribution Of Diffracted Bean Intensmentioning
confidence: 99%
“…Investigation of the coordinate distribution I(x) of such intensity permits us to determine the L parameter [7][8][9]:…”
Section: Analysis Of a Spatial Distribution Of Diffracted Bean Intensmentioning
confidence: 99%