On the twinning occurrence in bulk semiconductor crystal growth

Duffar, T.; Nadri, Amal

doi:10.1016/j.scriptamat.2010.02.034

Cited by 77 publications

(28 citation statements)

References 14 publications

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“…Twin nucleation in the bulk crystal is thermodynamically unfavorable and in the case of silicon is always related to the presence of {111} facets at the solid liquid interface [40]. Since twinning requires a high undercooling in order to occur in the middle of a facet, it is usually observed at a solid e solid e liquid grain boundary triple line (SSL e TL) in the case of multi e crystalline silicon solidification [29,41], at the SLV e TL in the case of Czochralski growth [38,39] and at the borders, where the liquid silicon is in contact with the crucible, during the directional solidification of either the mono-like or the multicrystalline ingots SSL e TL [5]. In our experiments, we have been able to scrutinize the twin nucleation mechanisms at the borders.…”

Section: Discussionmentioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

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a b s t r a c tThis work is dedicated to the advanced in situ X-ray imaging and complementary ex situ investigations of the growth mechanisms when silicon solidifies on a monocrystalline seed oriented 〈110〉 in the solidification direction. It aims at deepening the fundamental understanding of the phenomena that occur throughout silicon crystal growth with a particular focus on mechanisms of formation of defects detrimental for photovoltaic applications. Namely, grain nucleation, grain boundary formation and evolution, grain competition, twining occurrence, dislocation generation and interaction with structural defects are explored and analysed. Nucleation of twin crystals preferentially occurs on {111} facets at the edge of the sample where solid e liquid e vapor triple point lines exist in interaction also with the crucible as well as, at grain boundary grooves at the solid e liquid interface (solid e solid e liquid triple lines), where two grains are in competition, either on the {111} facets of the groove or in the groove. Enhanced undercooling and/or stress accumulation levels are found to act as driving forces for grain nucleation. Additionally, it is demonstrated that twin formation has the property to relax stresses stored in the crystal during the growth process. However, grains formed initially in twin position can undergo severe distortion when they are in direct competition or when they are squeezed in e between grains. Moreover, we show by X-ray Bragg diffraction imaging that on the one hand, coherent S3 〈111〉 grain boundaries efficiently block the propagation of growth dislocations during the solidification process, while on the other hand, dislocations are emitted at the level of incoherent and/or asymmetric S27a 〈110〉 at the encounter with either S3 〈111〉 or S9 〈110〉 grain boundaries. Indeed, grain boundaries that deviate from the ideal coincidence orientation act as dislocation sources that spread inside the surrounding crystals.

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Section: Discussionmentioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

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“…In fact, the grain structure in multi-crystalline silicon largely depends on a series of phenomena related to faceting/undercooling of the solid-liquid interface during growth as for example twinning [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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“…While numerous papers have been devoted to twinning in Si, relatively few consider the case of multi-crystalline structures. The current state of twinning theory is not mature enough to explain the observed behavior [15].…”

Section: Discussionmentioning

confidence: 99%