In this work, the feasibility of using interdigitated electrodes to measure the kinetics of photoacid generation in a resist film has been examined. Interdigitated electrodes provide a quick, noninvasive, nondestructive alternative to traditional Dill C measurement techniques and unlike traditional techniques is easily performed in a wafer fab environment. The initial results indicate that the interdigitated electrodes ͑IDEs͒ used in this work are capable of both detecting the small quantities of acid generated by photoacid generators ͑PAGs͒ at loadings typical of those found in chemically amplified resists and quantifying the amount of acid generated during exposure. In addition, a linear relationship has been observed between measured IDE capacitance and both PAG and photoacid content. This relationship has been utilized to determine the Dill C parameter from the measured IDE capacitance response vs. exposure dose for films consisting of triphenylsulfonium triflate ͑TPS-Tf͒ in a poly͑hydroxystyrene͒ ͑PHOST͒ matrix. A Dill C value of 0.0445 cm 2 /mJ was measured for TPS-Tf in PHOST, which is in agreement with literature values for similar PAG-polymer systems.As the microelectronics industry has strived for smaller and smaller feature sizes, the lithographic techniques utilized to print these features have become increasingly complex. As a result, the number of process variables that can have a significant impact upon the quality of the lithographic process is quite large. The fabrication time and associated costs for running lithography experiments designed to test these complex processes are impractical for a semiconductor manufacturer to absorb and still maintain a competitive position in the industry. The use of lithography simulation software can provide a means to explore such lithography process space and its use has steadily increased in importance in recent years.The use of simulations provides many advantages to the user. First, simulations significantly reduce the number of experiments that the user must perform to fully understand the lithographic process. This reduces process development time and cost substantially. Second, simulations allow the user to plan ahead for the lithography processes needed in the future by simulating the behavior of materials and processes not yet realized. Despite their many advantages, simulations are only as useful and accurate as the physical model parameters on which they are based. In order for lithography simulations to have true predictive capability, it is imperative that the models used in the simulation routines are provided with accurate physical parameters. One such parameter often sought for modeling chemically amplified photoresists, and the focus of the research reported in this paper, is the Dill C parameter.Positive-tone chemically amplified photoresists rely on a twostep mechanism to achieve imaging in the resist film. 1 First, exposure to UV radiation causes a photoacid generator ͑PAG͒ to decompose and produce an acid within the film. Second, the photog...