2007
DOI: 10.1016/j.jcrysgro.2007.04.024
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One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55μm application

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Cited by 3 publications
(1 citation statement)
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“…Under these growth conditions it can be seen that dot nucleation on the restricted area on top of the ridge mesa has not led to a more uniform size distribution compared to the unpatterned area. This is similar to the photoluminescence measurements on QD chains on patterned substrates reported elsewhere [14,21,33,12,13,15]. It therefore appears that the forced alignment of dots in chains by substrate pre-patterning does not a priori result in improved dot uniformity.…”
Section: Device Operationsupporting
confidence: 88%
“…Under these growth conditions it can be seen that dot nucleation on the restricted area on top of the ridge mesa has not led to a more uniform size distribution compared to the unpatterned area. This is similar to the photoluminescence measurements on QD chains on patterned substrates reported elsewhere [14,21,33,12,13,15]. It therefore appears that the forced alignment of dots in chains by substrate pre-patterning does not a priori result in improved dot uniformity.…”
Section: Device Operationsupporting
confidence: 88%