One-dimensional III-nitrides: towards ultrahigh efficiency, ultrahigh stability artificial photosynthesis

Abstract

This review describes the recent developments of one-dimensional III-nitride semiconductors and the design strategies for efficient and stable artificial photosynthesis of water splitting and carbon dioxide reduction.

Concentrated Solar Light Photoelectrochemical Water Splitting for Stable and High‐Yield Hydrogen Production

“…After the PEC HER reaction for 24 h, a new peak corresponding to Ga─O─N bond appeared, indicating the formation of gallium oxynitrides. [ 15a,c ] The O 1s spectra also showed emerging peaks of O─Ga─N in both Pt/GaN/Si and GaN/Si after the reaction, further confirming the formation of gallium oxynitride (Figure 2d ). The Pt 4f spectra of pristine and reacted Pt/GaN/Si showed similar binding states of Pt 0 and Pt 2+ (Figure 2e ).…”

“…This self‐improvement is known to be due to the partial substitution of N on the nonpolar crystal facets of GaN NWs with O during the reaction, leading to gallium oxynitrides formation and an enhancement of the catalytic properties for H 2 evolution. [ 15 ] It should be noted that the performance of Pt/GaN/Si rapidly degraded during the first 0.5 h reaction under 6.4 sun light and stabilized thereafter (Figure S7c , Supporting Information), whereas GaN/Si showed much faster self‐improvement during the initial 20 h and then stabilized (Figure S7d , Supporting Information). J 0 (Figure 1c ) and V onset (Figure 1d ) were plotted as a function of reaction time.…”