One-dimensional plasmon dispersion and dispersionless intersubband excitations in GaAs quantum wires

Goñi, A. R.; Pinczuk, A.; Weiner, J. S.; Calleja, José María; Dennis, B. S.; Pfeiffer, L. N.; West, K. W.

doi:10.1103/physrevlett.67.3298

Cited by 364 publications

(259 citation statements)

References 15 publications

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“…13,14 Raman scattering, or more generally inelastic light scattering is a standard nondestructive contactless characterization technique of materials, which allows to access mainly the phonon modes at the ⌫ point and in some cases to the dispersion. [15][16][17] Raman spectroscopy can be realized by using a confocal microscope, thereby obtaining lateral submicron resolutions of the properties of a material. It has been developed to be a versatile tool for the characterization of semiconductors leading to detailed information on crystal structure, phonon dispersion, electronic states, composition, strain and so on of semiconductor nanostructures or nanowires.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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Polarization-dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E 1 ͑TO͒ at 267 cm −1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm −1 of the E 1 ͑TO͒. The transversal optical mode related to the wurtzite structure, E 2 H , is measured between 254 and 256 cm −1 , depending on the wurtzite content. The azimuthal dependence of E 2 H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E 1 ͑TO͒ and E 2 H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on ͕110͖ facets is presented.

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Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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“…7 The situation is changing with the use of inelastic light scattering to study QD excitations. This experimental technique is nowadays recognized as one of the more powerful tools to study the elementary excitations of low-dimensional electronic nanostructures, [8][9][10][11][12][13] and it is contributing to a deeper understanding of the two-dimensional electron gas [14][15][16][17][18] ͑2DEG͒. Using polarization selection rules, it allows us to disentangle CDE from spin density ͑SDE͒ and singleparticle excitations ͑SPE͒, and to observe them all in the same sample.…”

Section: Introductionmentioning

confidence: 99%

Wave-vector dependence of spin and density multipole excitations in quantum dots

et al. 2000

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We have employed time-dependent local-spin density-functional theory to analyze the multipole spin and charge density excitations in GaAs-Al x Ga 1Ϫx As quantum dots. The on-plane transferred momentum degree of freedom has been taken into account, and the wave-vector dependence of the excitations is discussed. In agreement with previous experiments, we have found that the energies of these modes do not depend on the transferred wave vector, although their intensities do. Comparison with a recent resonant Raman scattering experiment ͓C. Schüller et al., Phys. Rev. Lett. 80, 2673 ͑1998͔͒ is made. This allows us to identify the angular momentum of several of the observed modes as well as to reproduce their energies.

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“…There has been considerable recent theoretical and experimental interest in the hot-electron energy relaxation problem in polar semiconductors, particularly in three-dimensional (3D) and two-dimensional (2D) GaAs structures [1][2][3][4][5][6][7][8][9]. More recently, one-dimensional (1D) hot-electron relaxation in quantum wire structures has been considered theoretically [10][11][12], motivated by the fact that there has been successful growth of one-dimensional GaAs quantum-well wires with only the lowest subband occupied [13]. In this article, we develop a many-body theory for hot-electron energy relaxation in one-dimensional quantum wires within the electron temperature model, taking full account of LO-phonon renormalization effects which have been left out of existing theories [10,11].…”

mentioning

confidence: 99%

Energy relaxation of an excited electron gas in quantum wires: Many-body electron-LO-phonon coupling

Zheng

Sarma

1996

Phys. Rev. B

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We theoretically study energy relaxation via LO-phonon emission in an excited one-dimensional electron gas confined in a GaAs quantum wire structure. We find that the inclusion of phonon renormalization effects in the theory extends the LO-phonon dominated loss regime down to substantially lower temperatures. We show that a simple plasmon-pole approximation works well for this problem, and discuss implications of our results for low temperature electron heating experiments in quantum wires.

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One-dimensional plasmon dispersion and dispersionless intersubband excitations in GaAs quantum wires

Cited by 364 publications

References 15 publications

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Wave-vector dependence of spin and density multipole excitations in quantum dots

Energy relaxation of an excited electron gas in quantum wires: Many-body electron-LO-phonon coupling

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