The electron reflection amplitude R at stacking-fault (SF) induced fractional steps is determined for Ag(111) surface states using a low temperature scanning tunneling microscope. Unexpectedly, R remains as high as 0.6 ∼ 0.8 as energy increases from 0 to 0.5 eV, which is in clear contrast to its rapidly decreasing behavior for monatomic (MA) steps [L. Bürgi et al., Phys. Rev. Lett. 81, 5370 (1998)]. Tight-binding calculations based on ab-initio derived band structures confirm the experimental finding. Furthermore, the phase shifts at descending SF steps are found to be systematically larger than counterparts for ascending steps by ≈ 0.4π. These results indicate that the subsurface SF plane significantly contributes to the reflection of surface states. The Shockley surface states on a noble metal exemplify an ideal two-dimensional (2D) electron system, which works as a basis for demonstrating and utilizing quantum natures of electrons [1][2][3]. To realize quantum confinement of surface states, monatomic (MA) steps [4][5][6][7][8], artificially manipulated atoms [9,10], and self-assembled molecules [11] have successfully been used. However, the lifetimes of resultant quantized states are rather short especially at high energies, because of lossy scattering at the boundary caused by low reflection amplitude [6,[12][13][14][15]. This may pose a fundamental limitation on the usage of these quantum structures. Although the reflection at the boundary may be enhanced by multiplying potential barriers [16], a search for a new form of confinement is highly desirable. Recently, stacking-fault (SF) defects have been found to substantially modify surface and bulk electronic states of Ag thin films [17][18][19][20]. Nevertheless, basic properties concerning the reflection of surface states by a SF-induced step have so far remained elusive.In this Letter, we determine the reflection amplitude R at SF steps for Ag(111) surface states using a low temperature scanning tunneling microscope (STM). R retains high values of 0.6 ∼ 0.8 as energy increases from 0 to 0.5 eV, which is in striking contrast to the rapid decrease in R for MA steps reported in Ref. [6]. Tight-binding calculations based on ab-initio derived band structures confirm the experimental finding. The results demonstrate that SF steps offer a better method for realizing a strong quantum confinement on metal surfaces than MA steps. The phase shifts at descending and ascending SF steps are also determined for the same energy region, the former being systematically larger than the latter by ≈ 0.4π. The possibility of significant scattering of the surface state by the subsurface SF plane is proposed based on these measurements.The experiments were performed in an ultrahigh vacuum system equipped with a low temperature STM. To determine the reflection amplitude and the phase shift, sufficiently long and straight SF steps are needed. For this aim, Si(111)4×1-In surfaces (referred to as In4×1) were used as one-dimensional (1D) atomic-scale geometric templates [17,18,21]. A...